Back to results
US 6,274,465 B1Granted
DC electric field assisted anneal
AssigneeInternational Business Machines Corporataion
InventorsArne W. Ballantine, John J. Ellis-Monaghan, Toshiharu Furukawa, Glenn R. Miller, James A. Slinkman
Life of this patent
Estimating the term…
Abstract
A method for forming a desired junction profile in a semiconductor device. At least one dopant is introduced into a semiconductor substrate. The at least one dopant is diffused in the semiconductor substrate through annealing the semiconductor substrate and the at least one dopant while simultaneously exposing the semiconductor substrate to a DC electric field.
Claims47
A method for forming a desired junction profile in a semiconductor substrate, comprising:
- introducing at least one dopant into a semiconductor substrate;
- and
- diffusing the at least one dopant in the semiconductor substrate through annealing the semiconductor substrate and the at least one dopant while simultaneously exposing the semiconductor substrate to a DC electric field.
Dependencies are inferred from the claim text.