Epitaxial cleaning process using HCL and N-type dopant gas to reduce defect density and auto doping effects
AssigneeTexas Instruments Incorporated
InventorsVladimir F. Drobny, Kevin X. Bao
Life of this patent
Estimating the term…
Loading patent…
AssigneeTexas Instruments Incorporated
InventorsVladimir F. Drobny, Kevin X. Bao
Estimating the term…
An epitaxial layer is formed on a P type silicon substrate in which a plurality of P+ buried layer regions, a plurality of N+ buried layer regions, and a P+ field layer region occupying most of the substrate surface are diffused. The substrate is loaded in a reactor with a carrier gas. The substrate is pre-baked at a temperature of approximately 850° C. As the substrate is heated to a temperature of 1050° C., N+ dopant gas is injected into the carrier gas to suppress auto doping due to P+ atoms that escape from the P+ buried layer regions. The substrate is subjected to a high temperature bake cycle in the presence of the N+ dopant gas. A first thin intrinsic epitaxial cap layer is deposited on the substrate, which then is subjected to a high temperature gas purge cycle at 1080° C. A second thin intrinsic epitaxial cap layer then is deposited on the first, and a second high temperature gas purge cycle is performed at 1080° C. Then an N−epitaxial layer is deposited on the second cap layer at 1080° C. The harmful effects of a dip in the dopant concentration profile at the bottoms of the collectors of the NPN transistors are avoided by the process.
A method of making an epitaxial layer on a silicon substrate having in a major surface thereof a P+ field layer region in a substantial portion of the major surface, comprising:
A method of making an epitaxial layer on a P type silicon substrate having in a major surface thereof a plurality of P+ buried layer regions, a plurality of N+ buried layer regions, and also having a P+ field layer region in most of the major surface, comprising:
A method of making an epitaxial layer on a substrate having in a major surface thereof a P+ field layer region in a substantial portion of the major surface, comprising:
A method of making an epitaxial layer on a substrate having in a major surface thereof a P+ field layer region in a substantial portion of the major surface, comprising:
Dependencies are inferred from the claim text.