Semiconductor device comprising a MOS element and a fabrication method thereof

Abstract

This invention provides a method of fabricating a semiconductor device comprising a MOS element, and comprises the steps of: (A) forming a conductive layer comprising at least silicon on a semiconductor substrate, with an insulating film therebetween; (B) diffusing impurities to act as donors or acceptors into the semiconductor substrate, to form an impurity diffusion layer for configuring a source region or drain region; (C) forming a metal layer capable of creating a silicide, on at least the surfaces of the conductive layer and the impurity diffusion layer; and (D) performing thermal processing to convert the metal layer into a silicide; wherein this method further comprises a step of using ion implantation to implant atoms that do not function as donors or acceptors, such as argon or krypton, into at least the conductive layer and the impurity diffusion layer, before the step (C) of forming the metal layer to make the surface of the impurity diffusion layer non-crystalline.

Dependencies are inferred from the claim text.