Back to results
US 6,274,437 B1Granted
Trench gated power device fabrication by doping side walls of partially filled trench
AssigneeTotem Semiconductor Limited
InventorJonathan Leslie Evans
Life of this patent
Estimating the term…
Abstract
A trench is formed in a semiconductor substrate using a mask. The trench is filled with electrode material, a part of which is removed; alternatively, the trench is partially filled with the electrode material. The side walls of the trench are doped with the mask still in place. After the side walls are doped, the remainder of the trench is filled. The result is a trench gated power device such as a MOSFET, MESFET or IGBT.
Claims10
A method of fabricating a trench gated power device, the method comprising:
- (i) forming a trench in a semiconductor substrate using a mask to define the trench region;
- (ii) either
- a) filling the trench with electrode material and removing part of the contents of the trench to leave a partially filled trench;
- or
- b) partially filling the trench with electrode material;
- (iii) doping the side walls of the partially filled trench with the mask still in place;
- and
- (iv) filling the remainder of the trench after step (iii);
- wherein the trench gated power device is one selected from the group consisting of a MOSFET, MESFET and IGBT.
6 more elements
Dependencies are inferred from the claim text.