US 6,274,427 B1Granted

Method of manufacturing a DRAM capacitor

AssigneeNEC Corporation

InventorHaruo Iwasaki

Life of this patent

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Abstract

A capacitor is provided, which makes it easy to increase the opposing area size between the lower and upper electrode in spite of miniaturization, and which ensures a desired capacitance value large enough for stable operation of a semiconductor memory device in spite of miniaturization. The capacitor is comprised of a lower electrode formed over an interlayer dielectric layer of a substrate, an upper electrode, and a dielectric located between the lower and upper electrodes. The lower electrode has a first electrode part and a second electrode part connected to each other. The first electrode part includes a plate-shaped bottom subpart and a sidewall subpart extending upward from the periphery of the bottom subpart. The bottom subpart and the sidewall subpart form an inner space. At least part of the second electrode part is located in the inner space so that a first gap is formed between the bottom subpart and the second electrode part and a second gap is formed between the sidewall subpart and the second electrode part. The upper electrode is opposed to the bottom subpart of the first electrode part of the lower electrode and to the second electrode part thereof in the first gap, and is opposed to the sidewall subpart of the first electrode part of the lower electrode and to the second electrode part thereof in the second gap.

Claims12

Dependent claims

A method of fabricating a capacitor, comprising the steps of:

(a) preparing a substrate having an interlayer dielectric layer;
(b) forming a first spacer layer over said interlayer dielectric layer;
said first spacer layer having an opening penetrating the same;
(c) forming a first conductive layer on said interlayer dielectric layer to cover said first spacer layer;
(d) forming a second spacer layer on said first conductive layer;
(e) selectively removing said second spacer layer, said first conductive layer, and said interlayer dielectric layer, thereby forming a contact hole penetrating said second spacer layer, said first conductive layer, and said interlayer dielectric layer;
(f) forming a second conductive layer on said second spacer layer;
said second conductive layer being contacted with said first conductive layer;
(g) selectively removing said second and first conductive layers and said second spacer layer until said first spacer layer is exposed, thereby leaving selectively said second and first conductive layer and said second spacer layer in said opening of said first spacer layer;
said first conductive layer left in said opening of said first spacer layer serving as a first electrode part of a lower electrode, where first electrode part includes a bottom subpart and a sidewall subpart extending upward from a periphery of said bottom subpart;
said bottom subpart and said sidewall subpart forming an inner space;
said second conductive layer left in said opening of said first spacer layer serving as a second electrode part of said lower electrode;
at least part of said second electrode part being located in said inner space so that a first gap is formed between said bottom subpart and said second electrode part and a second gap is formed between said sidewall subpart and said second electrode part;
(h) entirely removing said second spacer layer left in said opening of said first spacer layer and said first spacer layer;
(i) forming a capacitor dielectric on exposed areas of said first electrode part of said lower electrode and said second electrode part thereof;
and
(j) forming an upper electrode on said capacitor dielectric so as to fill said first and second gaps between said first electrode part of said lower electrode and said second electrode part thereof.

14 more elements

A method of fabricating a semiconductor device with capacitors, comprising the steps of:

(a) preparing a substrate having an interlayer dielectric layer;
(b) forming a first spacer layer over said interlayer dielectric layer;
said first spacer layer having opening penetrating the same.
(c) forming a first conductive layer on said interlayer dielectric layer to cover said first spacer layer;
(d) forming a second spacer layer on said fist conductive layer;
(e) selectively removing said second spacer layer, said first conductive layer, and said interlayer dielectric layer, thereby forming contact holes penetrating said second spacer layer, said first conductive layer, and said interlayer dielectric layer;
(f) forming a second conductive layer on said second spacer layer;
said second conductive layer being contacted with said first conductive layer;
(g) selectively removing said second and first conductive layers and said second spacer layer until said first spacer layer is exposed, thereby leaving selectively said second and first conductive layers and said second spacer layer in said openings of said first spacer layer;
said first conductive layer left in each of said openings of said first spacer layer serving as a first electrode part of a lower electrode of each of said capacitors, where said first electrode part includes a bottom subpart and a sidewall subpart extending upward from a periphery of said bottom subpart;
said bottom subpart and said sidewall subpart forming an inner space;
said second conductive layer left in each of said openings of said first spacer layer serving as a second electrode part of said lower electrode of each of said capacitors;
in each of said openings, at least part of said second electrode part being located in said inner space so that a first gap is formed between said bottom subpart and said second electrode part and a second gap is formed between said sidewall subpart and said second electrode part;
(h) entirely removing said second spacer layer left in said openings of said first spacer layer and said first spacer layer;
(i) forming a capacitor dielectric on exposed areas of said first electrode parts of said lower electrodes and said second electrode parts thereof;
and
(j) forming an upper electrode on said capacitor dielectric so as to fill said first and second gaps between said first electrode parts of said lower electrodes and said second electrode parts thereof.

14 more elements

Dependencies are inferred from the claim text.

Facts

Application: 09/551,198Filed 17 Apr 2000
Priority: JP 11-11098119 Apr 1999
Granted: 14 Aug 2001
Term ends: Not estimatedThe source records don’t support an estimate.

Classification8 codes

H10B 12/0335
The capacitor extending over the transistor: making a connection between the transistor and the capacitor, e.g. plug
H10B 12/315
Having a storage electrode stacked over the transistor: with the capacitor higher than a bit line
H10D 1/042
Of capacitors having no potential barriers: using deposition processes to form electrode extensions
H10D 1/714
Having non-planar surfaces, e.g. formed by texturisation: having horizontal extensions