Process for producing heteropitaxial diamond layers on Si-substrates
AssigneeDaimler-Benz Aktiengesellschaft
InventorsClaus-Peter Klages, Xin Jiang, Hans-Jürgen Füsser, Martin Hartweg, Reinhard Zachai, Manfred Rösler
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Abstract
The invention relates to a method for producing heteroepitaxial diamond layers on Si-substrates by means of CVD and standard process gases, in which (a) during the nucleation phase a negative bias voltage is applied to the Si-substrate and (b) following the nucleation phase diamond deposition takes place.
Claims22
A process for producing heteroepitaxial diamond layers on Si-substrates by CVD, in which standard process gases are supplied to a reactor provided with a heated Si-substrate, comprising,
- (a) pretreating a surface of the Si-substrate by applying a vacuum and heating the Si-substrate to temperatures between 300 and 1100° C.,
- (b) performing a nucleation phase with the application of a bias voltage in the range −60 to −300 V at a substrate temperature of 400 to 1100° C., and
- (c) removing the bias voltage and performing diamond deposition directly onto the surface of the Si-substrates.
A process for producing heteroepitaxial diamond layers on Si-substrates by CVD in a reactor chamber comprising pretreating a surface of the Si-substrates by applying a vacuum and heating the Si-substrates to temperatures between 300 and 1100° C., performing a nucleation phase with the application of a bias voltage in the range −60 to −300 V at a substrate temperature between 400 and 1100° C., removing the bias voltage, and performing a diamond deposition directly onto the surface of the Si-substrates, the Si-substrates remaining in the reactor chamber during all of the steps.
Dependencies are inferred from the claim text.