Method of strain engineering and impurity control in III-V nitride semiconductor films and optoelectronic devices
AssigneeLumileds Lighting U.S., LLC
InventorsR. Scott Kern, Changhua Chen, Werner Goetz, Chihping Kuo
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Abstract
In the present invention, an interfacial layer is added to a light-emitting diode or laser diode structure to perform the role of strain engineering and impurity gettering. A layer of GaN or AlxInyGa1−x−yN (0≦x≦1, 0≦y≦1) doped with Mg, Zn, Cd can be used for this layer. Alternatively, when using AlxInyGa1−x−yN (x>0), the layer may be undoped. The interfacial layer is deposited directly on top of the buffer layer prior to the growth of the n-type (GaN:Si) layer and the remainder of the device structure. The thickness of the interface layer varies from 0.01-10.0 μm.
Claims11
A method for manufacturing a light-emitting diode comprising the steps of:
- forming a buffer layer over a substrate;
- forming an interfacial layer over the buffer layer, the interfacial layer including a dopant that has an affinity for oxygen bearing compounds, the interfacial layer formed from a material selected from the group consisting of GaN, GaP, and GaAs;
- forming an n-type layer directly on the interfacial layer;
- forming an active region over the n-type layer;
- forming a p-type layer over the active region;
- and
- depositing at least two metal contacts, wherein one of the metal contacts is connected to the n-type layer and the other of the metal contacts is connected to the p-type layer.
A method for manufacturing a light-emitting diode comprising the steps of:
- forming a buffer layer over a substrate;
- forming an interfacial layer over the buffer layer, the interfacial layer including a dopant that has an affinity for oxygen bearing compounds, the interfacial layer formed from a material selected from the group consisting of alloys of AlInGaN, AlInGaP, and AlInGaAs;
- forming an n-type layer over the interfacial layer;
- forming an active region over the n-type layer;
- forming a p-type layer over the active region;
- and
- depositing at least two metal contacts, wherein one of the metal contacts is connected to the n-type layer and the other of the metal contacts is connected to the p-type layer.
A method for manufacturing a light-emitting diode comprising the steps of:
- forming a buffer layer over a transparent substrate;
- forming an interfacial layer over the buffer layer, the interfacial layer including a dopant that has an affinity for oxygen bearing compounds, the interfacial layer formed from a material selected from the group consisting of alloys of GaN, GaP, and GaAs;
- forming an n-type layer directly on the interfacial layer;
- forming an active region over the n-type layer;
- forming a p-type layer over the active region;
- and
- depositing at least two metal contacts, wherein one of the metal contacts is connected to the n-type layer and the other of the metal contacts is connected to the p-type layer.
Dependencies are inferred from the claim text.