Processing methods for providing metal-comprising materials within high aspect ratio openings

A processing method, comprising:

• providing a substrate having an opening therein, the opening having a width with a critical dimension of greater than or equal to about 0.35 microns and having a depth of less than or equal to about 2.4 microns;
• forming a metal-comprising layer over the opening, the metal-comprising layer having a thickness that is at least about twice the critical dimension of the opening width;
• providing a first pressure against the metal-comprising layer, said first pressure being about 1 atmosphere;
• and
• ramping-up the first pressure at a rate of at least about 20 atmospheres per second to a second pressure.

A processing method, comprising:

• providing a substrate having an opening therein, the opening having a width with a critical dimension of greater than or equal to about 0.35 microns and having a depth of less than or equal to about 4 microns;
• forming a metal-comprising layer over the opening, the metal-comprising layer having a thickness that is at least about twice the critical dimension of the opening width;
• providing a first pressure against the metal-comprising layer, said first pressure being about 1 atmosphere;
• and
• ramping-up the first pressure at a rate of greater than or equal to about 35 atmospheres per second to a second pressure.

A processing method, comprising:

• providing a substrate having an opening therein, the opening having a width with a critical dimension of greater than or equal to about 0.25 microns and having a depth of less than or equal to about 3 microns;
• forming a metal-comprising layer over the opening, the metal-comprising layer having a thickness that is at least about twice the critical dimension of the opening width;
• providing a first pressure against the metal-comprising layer, said first pressure being about 1 atmosphere;
• and
• ramping-up the first pressure at a rate of greater than about 35 atmospheres per second to a second pressure.

A processing method, comprising:

• providing a substrate having an opening therein, the opening having a width with a critical dimension of greater than or equal to about 0.15 microns and having a depth of less than or equal to about 2 microns;
• forming a metal-comprising layer over the opening, the metal-comprising layer having a thickness that is at least about twice the critical dimension of the opening width;
• providing a first pressure against the metal-comprising layer, said first pressure being about 1 atmosphere;
• and
• ramping-up the first pressure at a rate of at least about 35 atmospheres per second to a second pressure.

A processing method, comprising:

• providing a substrate having an opening therein, the opening having a width with a critical dimension of greater than or equal to about 0.1 microns and having a depth of less than or equal to about 1 micron;
• forming a metal-comprising layer over the opening, the metal-comprising layer having a thickness that is at least about twice the critical dimension of the opening width;
• providing a first pressure against the metal-comprising layer, said first pressure being about 1 atmosphere;
• and
• ramping-up the first pressure at a rate of at least about 35 atmospheres per second to a second pressure.

A processing method, comprising:

• providing a substrate having a high aspect ratio opening therein, the opening having a widest portion and a width at said widest portion;
• in a first chamber, sputter depositing a metal to form a metal-comprising layer over the opening, the metal-comprising layer having a thickness that is at least about twice the width at the widest portion of the opening;
• transferring the substrate to a second chamber having a first pressure therein, said first pressure being about 1 atmosphere;
• and
• while the substrate is within the second chamber, ramping the first pressure within the second chamber at a rate of at least about 20 atmospheres per second to a second pressure, higher than the first pressure.