Very long and highly stable atomic wires, method for making these wires, application in nano-electronics
AssigneesCommissariat a l'Energie Atomique, Centre National De La Recherche Scientifique
InventorsGérald Dujardin, Andrew Mayne, Fabrice Semond, Patrick Soukiassian
Life of this patent
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Abstract
Atomic wires of great length and great stability are formed on the surface of a SiC substrate as straight chains of dimers of an element chosen from amongst SiC and C. In order to produce same, layers of the element are formed on the surface and the assembly is constructed by means of annealings of the surface provided with the layers. The resulting wires have application to nanoelectronics.
Claims14
A set of N atomic wires, wherein N is an integer equal to at least 1, wherein said wires are formed on the surface of an SiC substrate and comprise straight chains of dimers of an element selected from Si and C, said chains all running in the same direction parallel to each other and substantially equidistant from each other, and extending from one end of the substrate to another, said chains running perpendicular to the direction of the dimers.
Dependencies are inferred from the claim text.