Organometallic complex process for the preparation thereof and metal organic chemical vapor deposition using same

A process for depositing a metal oxide compound film on a substrate which comprises the steps of vaporizing the organometallic complex of formula (I) optionally together with one or more organometallic precursors, at a temperature ranging from 20 to 300° C. and bringing the resulting vapor into contact with the substrate heated to a temperature ranging from 300 to 600° C.:

• wherein,
• M is Ti or Zr;
• R1, R2, R3 and R4 are each independently H or C1-4 alkyl;
• and
• m is an integer ranging from 2 to 5.