Low adhesion semi-conductive electrical shields
AssigneeGeneral Cable Technologies Corporation
InventorMark R. Easter
Life of this patent
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Abstract
A low adhesion semiconductive dielectric shield for use with cross-linked polyethylene, ethylene-propylene rubber or ethylene-propylene-diene rubber (EPDM rubber) insulation. The dielectric shield comprises a base polymer which is a copolymer of ethylene with a mono-unsaturated ester; a conductive filler in an amount sufficient to give an electrical resistivity below 550 ohms-meter and as an adhesion adjusting device an ethylene vinyl acetate, ethylene alkyl acrylate or ethylene alkyl methacrylate copolymer having a molecular weight above 20,000 daltons and a polydispersity greater than 2.5 wherein the adhesion between the insulation and the semiconductive shield is between about 3-26 lbs per ½ inch.
Claims38
A strippable semiconductive shield comprising,
- a base polymer selected from the group consisting of ethylene vinyl acetate copolymers, ethylene alkyl acrylate copolymers wherein the alkyl group is selected from C1 to C6 hydrocarbons, ethylene alkyl methacrylate copolymers wherein the alkyl group is selected from C1 to C6 hydrocarbons and ethylene alkyl acrylate alkyl methacrylate terpolymers wherein the alkyl group is independently selected from C1 to C6 hydrocarbons;
- an adhesion modifying compound different from said base polymer comprising an ethylene vinyl acetate with a molecular weight greater than about 20,000 daltons and a polydispersivity greater than about 2.5;
- a conductive carbon black in an amount sufficient to give the semiconductive shield a resistance below about 550 ohm-meter.
A method of making a strippable semiconductive shield comprising the steps of compounding a base polymer selected from the group consisting of ethylene vinyl acetate copolymers, ethylene alkyl acrylate copolymers wherein the alkyl group is selected from C1 to C6 hydrocarbons, ethylene alkyl methacrylate copolymers wherein the alkyl group is selected from C1 to C6 hydrocarbons and ethylene alkyl acrylate alkyl methacrylate terpolymers wherein the alkyl group is independently selected from C1 to C6 hydrocarbons with;
- an adhesion modifying compound different from said base polymer comprising an ethylene vinyl acetate with a molecular weight greater than about 20,000 daltons and a polydispersivity greater than about 2.5 and
- a conductive carbon black in an amount sufficient to give the semiconductive shield a resistance below about 550 ohm-meter together in a mixer to form a mixture and
- extruding the mixture to form the strippable semiconductive shield.
A medium voltage electric power cable comprising a conductive core, and insulating layer, a strippable semiconductive shield, a grounded metal wire or tape and a jacket;
- wherein said strippable semi-conductive shield comprises,
- a base polymer selected from the group consisting of ethylene vinyl acetate copolymers, ethylene alkyl acrylate copolymers wherein the alkyl group is selected from C1 to C6 hydrocarbons, ethylene alkyl methacrylate copolymers wherein the alkyl group is selected from C1 to C6 hydrocarbons and ethylene alkyl acrylate alkyl methacrylate terpolymers wherein the alkyl group is independently selected from C1 to C6 hydrocarbons;
- an adhesion modifying compound different from said base polymer comprising an ethylene vinyl acetate with a molecular weight greater than about 20,000 daltons and a polydispersivity greater than about 2.5;
- a conductive carbon black in an amount sufficient to give the semiconductive shield a resistance below about 550 ohm-meter.
A method of making a medium voltage electric power cable having a strippable semiconductive shield comprising the steps of simultaneously extruding through a triple extrusion crosshead a semiconductive layer encasing a metal conductor, an insulating layer encasing the semiconductive layer and a strippable semiconductive layer encasing the insulating layer, wrapping the strippable semiconductive layer with metal wire or metal strips and placing a jacket over the metal wire or strips, wherein said strippable semiconductive comprises
- a base polymer selected from the group consisting of ethylene vinyl acetate copolymers, ethylene alkyl acrylate copolymers wherein the alkyl group is selected from C1 to C6 hydrocarbons, ethylene alkyl methacrylate copolymers wherein the alkyl group is selected from C1 to C6 hydrocarbons and ethylene alkyl acrylate alkyl methacrylate terpolymers wherein the alkyl group is independently selected from C1 to C6 hydrocarbons;
- an adhesion modifying compound different from said base polymer comprising an ethylene vinyl acetate with a molecular weight greater than about 20,000 daltons and a polydispersivity greater than about 2.5;
- a conductive carbon black in an amount sufficient to give the semiconductive shield a resistance below about 550 ohm-meter.
A method of making a medium voltage electric power cable having a strippable semiconductive shield comprising the steps of simultaneously extruding through a double extrusion crosshead onto a semiconductive layer encasing a metal conductor, an insulating layer encasing the semiconductive layer and a strippable semiconductive layer encasing the insulating layer, wrapping the strippable semiconductive layer with metal wire or metal strips and placing a jacket over the metal wire or strips, wherein said strippable semiconductive comprises
- a base polymer selected from the group consisting of ethylene vinyl acetate copolymers, ethylene alkyl acrylate copolymers wherein the alkyl group is selected from C1 to C6 hydrocarbons, ethylene alkyl methacrylate copolymers wherein the alkyl group is selected from C1 to C6 hydrocarbons and ethylene alkyl acrylate alkyl methacrylate terpolymers wherein the alkyl group is independently selected from C1 to C6 hydrocarbons;
- an adhesion modifying compound different from said base polymer comprising an ethylene vinyl acetate with a molecular weight greater than about 20,000 daltons and a polydispersivity greater than about 2.5;
- a conductive carbon black in an amount sufficient to give the semiconductive shield a resistance below about 550 ohm-meter.
Dependencies are inferred from the claim text.