Method of cleaning semiconductor device

Abstract

There is disclosed a semiconductor device cleaning method involving placing a cleaning solution containing 24 wt. % sulfuric acid, 5 wt. % hydrogen peroxide, 0.02 wt. % hydrogen fluoride, 0.075 wt. % n-dodecylbenzenesulfonic acid, and water into a quartz processing vessel and heating to no more than 100° C. A silicon wafer is immersed into the cleaning solution for 10 minutes and then washed by demineralized water for about 7 minutes. The surfaces of foreign particles on the wafer are etched by hydrogen fluoride, and n-dodecylbenzenesulfonic acid combines with the etched surfaces by sulfate ester bonding. The apparent diameter of the foreign particles increases and the repulsive force caused by zeta potential etc. increases, so that the foreign particles are unlikely to adhere to the surface of the silicon wafer permitting the foreign particles to be easily washed away in a water cleaning step.

Dependencies are inferred from the claim text.