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US 6,272,045 B1Granted
Nonvolatile semiconductor memory device
AssigneeNEC Corporation
InventorMitsuru Sekiguchi
Life of this patent
Estimating the term…
Abstract
A nonvolatile semiconductor memory device has writing signal line selecting transistors for applying writing signals to memory elements, respectively, reading signal line selecting transistors for delivering reading signals from the memory elements, respectively, and bit line selecting transistors connected between the writing signal line selecting transistors or the reading signal line selecting transistors and the memory elements, for selecting bit lines of each of the memory elements.
Claims20
A nonvolatile semiconductor memory device comprising:
- a plurality of memory elements for electrically writing data therein and erasing data therefrom;
- writing signal line selecting transistors for applying writing signals to said memory elements, respectively;
- and
- reading signal line selecting transistors, which are different from said writing signal line selecting transistors, for delivering reading signals from said memory elements, respectively.
1 more element
A nonvolatile semiconductor memory device comprising:
- a plurality of memory elements for electrically writing data therein and erasing data therefrom;
- writing signal line selecting transistors for applying writing signals to said memory elements, respectively;
- reading signal line selecting transistors, which are different from said writing signal line selecting transistors, for delivering reading signals from said memory elements, respectively;
- and
- bit line selecting transistors connected between said writing signal line selecting transistors or said reading signal line selecting transistors and said memory elements, for selecting bit lines of each of said memory elements.
2 more elements
Dependencies are inferred from the claim text.