System and method for programming a magnetoresistive memory device

Abstract

A system and method for programming a magnetoresistive memory array by applying current on a memory line aligned along the easy axis of the memory array, where the current generates a magnetic field that is independently sufficient to program at least two multi-state magnetoresistive memory elements coupled along the memory line. The memory array may be organized as one or more column memory lines along the easy axis and one or more row memory lines along a hard axis. In this configuration, the column drive circuitry includes a current source for each column memory line that is capable of programming all of the memory elements along the respective column memory line. Each column current source may assert a lesser or medium current level that generates a magnetic field that is insufficient alone to program the logic state of any memory element in the memory array. The medium current level, however, is sufficient to program each memory element along the corresponding column memory line when the memory element is also coupled along a row memory line that also receives a medium level current from a corresponding row current source. Each column current source may be one multi-state current source or may be several current sources to apply the appropriate programming current levels. The entire memory array may be programmed in one write operation by asserting an appropriate current level on each column and row memory line.

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