Fast overvoltage protected pad input circuit

An apparatus, including an overvoltage protection circuit, comprising:

• an input terminal configured to convey an input voltage;
• an output terminal configured to convey an output voltage;
• a buffer circuit including a plurality of buffer circuit terminals coupled between said input terminal and said output terminal, configured to receive and buffer said input voltage and in accordance therewith provide said output voltage;
• a voltage sensing circuit, coupled to said input terminal and said buffer circuit, configured to sense said input voltage and in accordance therewith maintain a plurality of voltages at said plurality of terminals of said buffer circuit in a corresponding predetermined plurality of voltage ranges;
• a control circuit, coupled to said buffer circuit, configured to receive at least one control signal and in accordance therewith causes said output voltage to be maintained at a predetermined value irrespective of said input voltage;
• and
• another voltage sensing circuit, coupled to said buffer circuit, configured to sense said output voltage and in accordance therewith provide first and second bias voltages to said buffer circuit, wherein:
• said output voltage includes
• minimum and maximum voltage values,
• a lower voltage threshold between said minimum and maximum voltage values,
• a higher voltage threshold between said lower voltage threshold and said maximum voltage value,
• a lower range of values between said minimum voltage value and said lower voltage threshold, and
• a higher range of values between said higher voltage threshold and said maximum voltage value;
• and
• in accordance with said first and second bias voltages, said buffer circuit provides said output voltage with a value which becomes
• equal to said maximum voltage value after said output voltage has transitioned from said lower range of values past said lower and higher voltage thresholds successively, and
• equal to said minimum voltage value after said output voltage has transitioned from said higher range of values past said higher and lower voltage thresholds successively.

An apparatus, including an overvoltage protection circuit, comprising:

• an input terminal configured to convey an input voltage;
• an output terminal configured to convey an output voltage;
• a telescopically connected group of field effect transistors, coupled between said input terminal and said output terminal, said group including a CMOS inverter and a p-type load transistor, the gate terminal of said p-type load transistor coupled to said input terminal and the drain terminal of said p-type load transistor coupled to a first voltage source, said p-type load transistor and said CMOS inverter having a common node;
• a first field effect transistor, the source terminal of said first field effect transistor coupled to said input terminal and the drain terminal of said first field effect transistor coupled to the gate terminals of said CMOS inverter, the gate terminal of said first field effect transistor coupled to said first voltage source;
• and
• a second field effect transistor, the source terminal of said second field effect transistor coupled to said common node and the drain terminal of said second field effect transistor coupled to said first voltage source, the gate terminal of said second field effect transistor coupled to the drain terminal of said first field effect transistor.

An apparatus, including an overvoltage protection circuit, comprising:

• an input terminal configured to convey an input voltage;
• an output terminal configured to convey an output voltage;
• a telescopically connected group of field effect transistors, coupled between said input terminal and said output terminal, said group including a CMOS inverter, formed of an n-type transistor and a p-type transistor, a p-type load transistor, and an additional n-type transistor, the gate terminal of said p-type load transistor coupled to said input terminal and the drain terminal of said p-type load transistor coupled to a first voltage source, said p-type load transistor and said CMOS inverter having a common node, and the drain terminal of said additional n-type transistor coupled to the drain terminal of said p-type transistor of said CMOS inverter, the source terminal of said additional n-type transistor coupled to the drain terminal of said n-type transistor of said CMOS inverter, the gate terminal of said additional n-type transistor configured to receive a control signal;
• a first field effect transistor, the source terminal of said first field effect transistor coupled to said input terminal and the drain terminal of said first field effect transistor coupled to the gate terminals of said CMOS inverter, the gate terminal of said first field effect transistor coupled to said first voltage source;
• and
• a second field effect transistor, the source terminal of said second field effect transistor coupled to said common node and the drain terminal of said second field effect transistor coupled to said first voltage source, the gate terminal of said second field effect transistor coupled to the drain terminal of said first field effect transistor;
• and
• a third field effect transistor, the drain terminal of said third field effect transistor coupled to said CMOS inverter and the source terminal of said third field effect transistor coupled to said first voltage source, the gate terminal of said third field effect transistor configured to receive another control signal.

An apparatus, including an overvoltage protection circuit, comprising:

• an input terminal configured to convey an input voltage;
• an output terminal configured to convey an output voltage;
• a telescopically connected group of field effect transistors, coupled between said input terminal and said output terminal, said group including a CMOS inverter, formed of an n-type transistor and a p-type transistor, a p-type load transistor, and an additional n-type transistor, the gate terminal of said p-type load transistor coupled to said input terminal and the drain terminal of said p-type load transistor coupled to a first voltage source, said p-type load transistor and said CMOS inverter having a common node, and the drain terminal of said additional n-type transistor coupled to the drain terminal of said p-type transistor of said CMOS inverter, the source terminal of said additional n-type transistor coupled to the drain terminal of said n-type transistor of said CMOS inverter, the gate terminal of said additional n-type transistor configured to receive a control signal;
• a first field effect transistor, the source terminal of said first field effect transistor coupled to said input terminal and the drain terminal of said first field effect transistor coupled to the gate terminals of said CMOS inverter, the gate terminal of said first field effect transistor coupled to said first voltage source;
• and
• second field effect transistor, the source terminal of said second field effect transistor coupled to said common node and the drain terminal of said second field effect transistor coupled to said first voltage source, the gate terminal of said second field effect transistor coupled to the drain terminal of said first field effect transistor;
• a third field effect transistor, the drain terminal of said third field effect transistor coupled to said CMOS inverter and the source terminal of said third field effect transistor coupled to said first voltage source, the gate terminal of said third field effect transistor configured to receive another control signal;
• a fourth field effect transistor, the source terminal of said fourth field effect transistor coupled to said common node and the drain terminal of said fourth field effect transistor coupled to a second voltage source, the gate terminal of said fourth field effect transistor coupled to said output terminal;
• and
• a fifth field effect transistor, the source terminal of said fifth field effect transistor coupled to the source terminal of said additional n-type transistor and the drain terminal of said fifth field effect transistor coupled to said first voltage source, the gate terminal of said fifth field effect transistor coupled to said output terminal.