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US 6,271,591 B1Granted
Copper-aluminum metallization
AssigneeAdvanced Micro Devices, Inc.
InventorsValery Dubin, Chiu Ting
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Abstract
A method for fabricating copper-aluminum metallization utilizing the technique of electroless copper deposition is described. The method provides a self-encapsulated copper-aluminum metallization structure.
Claims7
A metallization structure comprising:
- a dielectric layer, having a recess defined therein;
- a diffusion barrier layer formed on surfaces of the recess;
- and
- a conductive layer filling in the recess, the conductive layer comprising a copper alloy layer, a first thin layer of oxide formed on an exposed surface of the copper alloy layer, and a second thin layer of oxide at the interface between the copper alloy layer and the diffusion barrier layer.
1 more element
Dependencies are inferred from the claim text.