Transistor and method
AssigneeTexas Instruments Incorporated
InventorRobert H. Havemann
Life of this patent
Estimating the term…
Abstract
A method of fabricating a semiconductor device and the device. The device is fabricated by providing a substrate having a region thereover of electrically conductive material, and a dielectric first sidewall spacer on the region of electrically conductive material. A second sidewall spacer is formed over the first sidewall spacer extending to the substrate from a material which is selectively removal relative to the first sidewall spacer. An electrically conductive region is formed contacting the second sidewall spacer and spaced from the substrate. The second sidewall spacer is selectively removable to form an opening between the substrate and the electrically conductive region. The opening is filled with electrically conductive material to electrically couple the electrically conductive material to the substrate.
Claims3
An improved bipolar transistor which comprises:
- a collector of a first conductivity type upon a substrate;
- a base of a second conductivity type adjoining the collector
- an emitter of the first conductivity type embedded in the base along a side opposed to the collector;
- an upper emitter region adjoining the emitter and electrically connected to the emitter;
- a first dielectric sidewall spacer on the upper emitter region;
- a first electrically conductive material extending along the sidewall spacer to the base, thereby spacing the first electrically conductive material from the upper emitter region by only the thickness of the first sidewall spacer;
- and
- a first electrically conductive region contacting the first electrically conductive material and spaced from the substrate,
- wherein the first electrically conductive region has a width approximately equal to the first sidewall spacer width.
An improved bipolar transistor which comprises:
- a collector of a first conductivity type upon a substrate;
- a base of a second conductivity type adjoining the collector
- an emitter of the first conductivity type embedded in the base along a side opposed to the collector;
- an upper emitter region adjoining the emitter and electrically connected to the emitter;
- a first dielectric sidewall spacer on the upper emitter region;
- a first electrically conductive material extending along the sidewall spacer to the base, thereby spacing the first electrically conductive material from the upper emitter region by only the thickness of the first sidewall spacer;
- a first electrically conductive region contacting the first electrically conductive material and spaced from the substrate;
- a second dielectric sidewall spacer on the upper, emitter region and opposed the first dielectric sidewall spacer;
- a second electrically conductive material extending along the second sidewall spacer to the base, thereby spacing the second electrically conductive material from the upper emitter region by only the thickness of the second sidewall spacer, and
- a second electrically conductive region contacting the second electrically conductive material and spaced from the substrate,
- wherein the first and second electrically conductive regions each has a width approximately equal to 30 nm.
Dependencies are inferred from the claim text.