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US 6,271,573 B1Granted
Semiconductor device with gate structure and method of manufacturing the same
AssigneeKabushiki Kaisha Toshiba
InventorKyoichi Suguro
Life of this patent
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Abstract
Variations in threshold voltage among MOS devices are prevented by forming a metal gate electrode having an average grain size of 30 nm or less on a gate insulating film.
Claims24
A semiconductor device comprising:
- a semiconductor region,
- a gate insulating film formed on a surface of the semiconductor region;
- a first sate electrode formed on the gate insulating film, a portion of the first gate electrode being in contact with the gate insulating film and containing a metal wherein the first gate electrode is formed of a crystal structure comprising crystal grains larger than 0 nm and 30 nm or less in average diameter;
- and
- a second gate electrode formed on the first gate electrode, the second gate electrode being lower in resistivity than and larger in grain size than the first gate electrode.
2 more elements
A semiconductor device comprising:
- a semiconductor region;
- and
- an interlayer film formed on the semiconductor region and having an opening portion extended to a surface of the semiconductor region;
- a gate insulating film formed in the opening;
- a first gate electrode formed on a bottom surface and a side surface of the opening portion so as to not fill the opening portion therewith, an upper surface of the first gate electrode being substantially in a same plane as an upper surface of the interlayer insulating film, wherein a portion of the first gate electrode is in contact with the gate insulating film, contains a metal and is formed of a crystalline structure comprising crystal grains larger than 0 nm and 30 nm or less in average diameter;
- and
- a second gate electrode being lower in resistivity than and larger in grain size than the first gate electrode, said second gate electrode formed on the first gate electrode so as to fill the opening portion therewith, an upper surface of the second gate electrode being substantially in a same plane as a upper surface of the interlayer insulating film and the first gate electrode.
4 more elements
A semiconductor device comprising:
- a semiconductor region;
- a gate insulating film formed on a surface of the semiconductor region;
- and
- a first gate electrode formed on the gate insulating film, a portion of the first gate electrode being in contact with the gate insulating film and containing a metal wherein the first gate electrode is formed of a crystal structure comprising crystal grains larger than 0 nm and 30 nm or less in average diameter, wherein the portion of the first gate electrode that contacts the gate insulating film is made of at least one of oxygen-containing Ru, nitrogen-containing Ru, and nitrogen-containing RuO2.
1 more element
Dependencies are inferred from the claim text.