Semiconductor component which can be controlled by a field effect

In an improved power semiconductor component which can be controlled by a field effect and has a multiplicity of parallel-connected individual components disposed in each case in cells, the cells disposed tightly packed on a relatively small space in a cell array, the improvement comprising:

• a semiconductor body having a surface, including:
• a) at least one inner zone of a first conductivity type bordering at least partially on said surface, said at least one inner zone having at least one depletion zone of a second conductivity type and at least one complementary depletion zone having said first conductivity type a total quantity of doping of said at least one depletion zone corresponding approximately to a total quantity of doping of said at least one complementary depletion zone;
• b) at least one drain zone bordering said at least one inner zone;
• c) at least one base zone disposed in each of the cells and having a second conductivity type, said at least one base zone embedded in said surface;
• d) at least one source zone disposed in each of the cells and having said first conductivity type, said at least one source zone embedded in said at least one base zone;
• and
• e) shadow regions disposed in at least one of said at least one source zone of the cells, said shadow regions reducing an effective ratio of a channel width to a channel length;
• at least one source electrode making contact with said at least one base zone and said at least one source zone;
• and
• at least one gate electrode disposed above and completely insulated from said semiconductor body.