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US 6,271,544 B1Granted
SiC/Si heterostructure semiconductor switch and fabrication thereof
AssigneeNational Science Council
InventorsYean-Kuen Fang, Kuen-Hsien Wu, Tzer-Jing Chen
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Abstract
This invention is a novel silicon carbide and silicon (SiC/Si) heterostructure N-shaped negative-differential-resistance semiconductor switch having low power dissipation and large on/off current ratio. The structure of the semiconductor switch includes Al electrode/p-type single crystal silicon carbide layer/graded-composition layer/n-type single crystal silicon substrate/Al electrode (Al/p-SiC/GCL/n-Si/Al), wherein the graded-composition layer is a buffer layer between the p-SiC and n-Si layers.
Claims5
A SiC/Si heterostructure semiconductor switch device comprising:
- a single crystal silicon (Si) layer, silicon carbide (SiC) layer and a graded-composition layer between said Si layer and said SiC layer;
- where said Si layer is doped with n-type impurities;
- where said SiC layer is doped with p-type impurites;
- and where said graded-composition layer has a thickness of 2000-3000 Å.
1 more element
Dependencies are inferred from the claim text.