Porous materials
AssigneeShipley Company, L.L.C.
InventorsYujian You, Angelo A. Lamola, Robert H. Gore, Michael K. Gallagher, Nikoi Annan
Life of this patent
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Abstract
Porous organo polysilica dielectric materials having low dielectric constants useful in electronic component manufacture are disclosed along with methods of preparing the porous organo polysilica dielectric materials. Also disclosed are methods of forming integrated circuits containing such porous organo polysilica dielectric materials.
Claims26
A method of preparing porous organo polysilica dielectric materials comprising the steps of:
- a) dispersing removable cross-linked polymeric porogen particle in a B-staged organo polysilica dielectric material;
- b) curing the B-staged organo polysilica dielectric material to form an organo polysilica dielectric matrix material without substantially degrading the porogen particle;
- and c) subjecting the organo polysilica dielectric matrix material to conditions which at least partially remove the porogen particle to form a porous organo polysilica dielectric material without substantially degrading the organo polysilica dielectric material;
- wherein the porogen particle is substantially compatible with the B-staged organo polysilica dielectric material and wherein the porogen particle comprises as polymerized units at least one compound selected from silyl containing monomers or poly(alkylene oxide) monomers and at least one cross-linking agent;
- provided that when the organo polysilica is methyl silsesquioxane and the porogen particle comprises (trimethoxylsilyl)propylmethacrylate as polymerized units, the porogen particle further comprises as polymerized units at least one other compound selected from silyl containing monomers or poly(alkylene oxide) monomers.
A method of preparing an integrated circuit comprising the steps of:
- a) depositing on a substrate a layer of a composition comprising B-staged organo polysilica dielectric material having cross-linked polymeric porogen particles dispersed therein;
- b) curing the B-staged organo polysilica dielectric material to form an organo polysilica dielectric matrix material without substantially removing the porogen particles;
- c) subjecting the organo polysilica dielectric matrix material to conditions which at least partially remove the porogen particles to form a porous organo polysilica dielectric material layer without substantially degrading the organo polysilica dielectric material;
- d) patterning the organo polysilica dielectric layer;
- e) depositing a metallic film onto the patterned organo polysilica dielectric layer;
- and f) planarizing the film to form an integrated circuit;
- wherein the porogen particle is substantially compatible with the B-staged organo polysilica dielectric material and wherein the porogen particle comprises as polymerized units at least one compound selected from silyl containing monomers or poly(alkylene oxide) monomers and at least one cross-linking agent;
- provided that when the organo polysilica is methyl silsesquioxane and the porogen particle includes (trimethoxylsilyl)propylmethacrylate as polymerized units, the porogen particle further includes as polymerized units at least one other compound selected from silyl containing monomers or poly(alkylene oxide) monomers.
A composition comprising a B-staged organo polysilica dielectric material and a cross-linked polymeric porogen particle, wherein the porogen particle is substantially compatible with the B-staged organo polysilica dielectric material and wherein the porogen particle includes as polymerized units at least one compound selected from silyl containing monomers or poly(alkylene oxide) monomers and at least one cross-linking agent;
- provided that when the organo polysilica is methyl silsesquioxane and the porogen particle comprises (trimethoxylsilyl)propylmethacrylate as polymerized units, the porogen particle further comprises as polymerized units at least one other compound selected from silyl containing monomers or poly(alkylene oxide) monomers.
A method of preparing porous organo polysilica dielectric materials comprising the steps of:
- a) dispersing cross-linked removable polymeric porogen particle in a B-staged organo polysilica dielectric material;
- b) curing the B-staged organo polysilica dielectric material to form an organo polysilica dielectric matrix material without substantially degrading the porogen particle;
- and c) subjecting the organo polysilica dielectric matrix material to conditions which at least partially remove the porogen particle to form a porous organo polysilica, dielectric material without substantially degrading the organo polysilica dielectric material;
- wherein the porogen particle is substantially compatible with the B-staged organo polysilica dielectric material and wherein the porogen particle comprises as polymerized units at least one compound selected from silyl containing monomers or poly(alkylene oxide) monomers and at least one cross-linking agent.
A method of preparing an integrated circuit comprising the steps of:
- a) depositing on a substrate a layer of a composition comprising B-staged organo polysilica dielectric material having cross-linked polymeric porogen particles dispersed therein;
- b) curing the B-staged organo polysilica dielectric material to form an organo polysilica dielectric matrix material without substantially removing the porogen particles;
- c) subjecting the organo polysilica dielectric matrix material to conditions which at least partially remove the porogen particles to form a porous organo polysilica dielectric material layer without substantially degrading the organo polysilica dielectric material;
- d) patterning the organo polysilica dielectric layer;
- e) depositing a metallic film onto the patterned organo polysilica dielectric layer;
- and f) planarizing the film to form an integrated circuit;
- wherein the porogen particle is substantially compatible with the B-staged organo polysilica dielectric material and wherein the porogen particle comprises as polymerized units at least one compound selected from silyl containing monomers or poly(alkylene oxide) monomers and at least one cross-linking agent.
A composition comprising a B-staged organo polysilica dielectric material and a cross-linked polymeric porogen particle, wherein the porogen particle is substantially compatible with the B-staged organo polysilica dielectric material and wherein the porogen particle includes as polymerized units at least one compound selected from silyl containing monomers or poly(alkylene oxide) monomers and at least one cross-linking agent.
Dependencies are inferred from the claim text.