Method for forming oxide using high pressure

A method for fabricating a memory cell array on a semiconductor substrate, comprising the steps of:

• forming a first oxide layer on the semiconductor substrate;
• defining a plurality of active areas on the semiconductor substrate;
• forming a second oxide layer joined with the first oxide layer in field regions spaced between the active regions, wherein the second oxide layer is formed in the field regions at an increased pressure;
• and
• forming a plurality of memory cells on the plurality of active areas.

A method for fabricating a memory cell array on a semiconductor substrate, comprising the steps of:

• forming a first oxide layer on the semiconductor substrate;
• defining a plurality of active areas on the semiconductor substrate;
• forming a second oxide layer interspersed with the first oxide layer in field regions spaced between the active regions, wherein the second oxide layer is formed in the field regions at a pressure of at least approximately five atmospheres;
• and
• forming a plurality of memory cells on the plurality of active areas.

A method for fabricating a memory cell array on a semiconductor substrate, comprising the steps of:

• forming an oxide layer on the semiconductor substrate at a first pressure;
• defining a plurality of active areas on the semiconductor substrate;
• increasing the first pressure to a second pressure and continuing to form the oxide layer in field regions spaced between the active regions, wherein the second pressure is at least approximately five atmospheres;
• and
• forming a plurality of memory cells on the plurality of active areas.

A method for fabricating a memory cell array on a semiconductor substrate, comprising the steps of:

• defining a plurality of active areas on the semiconductor substrate between field areas;
• forming a first oxide layer on the semiconductor substrate in the field areas encapsulating contaminants remaining in the field areas;
• forming a second oxide layer interspersed with the first oxide layer, wherein the second oxide layer is formed at an elevated pressure;
• and
• forming a plurality of memory cells on the plurality of active areas.

A method for fabricating a memory cell array on a semiconductor substrate, comprising the steps of:

• forming a first oxide layer on the semiconductor substrate at a first pressure;
• defining a plurality of active areas on the semiconductor substrate;
• forming a second oxide layer joined with the first oxide layer in isolation regions spaced between the active regions, wherein the second oxide layer is formed in the isolation regions at a second pressure which is substantially greater than the first pressure;
• and
• forming a plurality of memory cells on the plurality of active areas.

A method for fabricating a memory cell array on a semiconductor substrate, comprising the steps of:

• forming a first oxide layer on the semiconductor substrate;
• defining a plurality of active areas on the semiconductor substrate;
• forming a second oxide layer joined with the first oxide layer in isolation regions spaced between the active regions, wherein the second oxide layer is formed in the isolation regions at an increased pressure;
• and
• forming a plurality of memory cells on the plurality of active areas.

A method for fabricating a memory cell array on a semiconductor substrate, comprising the steps of:

• forming a first oxide layer on the semiconductor substrate;
• defining a plurality of active areas on the semiconductor substrate;
• forming a second oxide layer interspersed with the first oxide layer in isolation regions spaced between the active regions, wherein the second oxide layer is formed in the isolation regions at a pressure of at least approximately five atmospheres;
• and
• forming a plurality of memory cells on the plurality of active areas.

A method for fabricating a memory cell array on a semiconductor substrate, comprising the steps of:

• forming an oxide layer on the semiconductor substrate at a first pressure;
• defining a plurality of active areas on the semiconductor substrate;
• increasing the first pressure to a second pressure and continuing to form the oxide layer in isolation regions spaced between the active regions, wherein the second pressure is at least approximately five atmospheres;
• and
• forming a plurality of memory cells on the plurality of active areas.

A method for fabricating a memory cell array on a semiconductor substrate, comprising the steps of:

• defining a plurality of active areas on the semiconductor substrate between isolation areas;
• forming a first oxide layer on the semiconductor substrate in the isolation areas encapsulating contaminants remaining in the isolation areas;
• forming a second oxide layer interspersed with the first oxide layer, wherein the second oxide layer is formed at an elevated pressure;
• and
• forming a plurality of memory cells on the plurality of active areas.