Apparatus for manufacturing semiconductor device method for forming HSG-polysilicon layer using same and method for forming capacitor having electrode of HSG-polysilicon layer

A method for manufacturing a semiconductor device, comprising:

• setting a wafer supporter at a standby position in a processing chamber, and maintaining the wafer supporter at the standby position to equilibrate a temperature of the wafer supporter and a temperature prevailing in the processing chamber at the standby position, without any wafer being loaded on the wafer supporter, wherein the temperature in the processing chamber is stabilized at a standby temperature;
• using an elevator to lower the wafer supporter from the standby position to a wafer load/unload position once the temperature in the processing chamber has stabilized;
• loading a wafer onto the wafer supporter once the wafer supporter is at the load/unload position;
• subsequently using the elevator to elevate the wafer supporter with the wafer loaded thereon from the load/unload position to a process position located above the standby position in the processing chamber;
• performing a process for manufacturing a semiconductor device while the wafer supporter is at the process position with the wafer loaded thereon;
• using the elevator to re-lower the wafer supporter with the wafer loaded thereon to the wafer load/unload position after completing the manufacturing process;
• unloading the processed wafer from the wafer supporter;
• and
• subsequently using the elevator to re-elevate the wafer supporter to the wafer standby position without any wafer being loaded thereon.