Methods for forming rhodium-containing layers such as platinum-rhodium barrier layers
AssigneeMicron Technology, Inc.
InventorsStefan Uhlenbrock, Eugene P. Marsh
Life of this patent
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Abstract
A method of forming a rhodium-containing layer on a substrate, such as a semiconductor wafer, using complexes of the formula LyRhYz is provided. Also provided is a chemical vapor co-deposited platinum-rhodium alloy barriers and electrodes for cell dielectrics for integrated circuits, particularly for DRAM cell capacitors. The alloy barriers protect surrounding materials from oxidation during oxidative recrystallization steps and protect cell dielectrics from loss of oxygen during high temperature processing steps. Also provided are methods for CVD co-deposition of platinum-rhodium alloy diffusion barriers.
Claims20
A method of manufacturing a semiconductor structure, the method comprising:
- providing a semiconductor substrate or substrate assembly;
- providing a precursor composition comprising one or more complexes of the formula:
- LyRhYz,
- wherein:
- each L group is independently a neutral or anionic ligand;
- each Y group is independently a pi bonding ligand selected from the group of CO, NO, CN, CS, N2, PX3, PR3, P(OR)3, AsX3, AsR3, As(OR)3, SbX3, SbR3, Sb(OR)3, NHxR3-x, CNR, and RCN, wherein R is an organic group, X is a halide, and x=0 to 3;
- y=1 to 4;
- and
- z=0 to 4;
- providing a nonhydrogen reaction gas;
- and
- forming a rhodium-containing layer from the precursor composition in the presence of the nonhydrogen reaction gas on a surface of the semiconductor substrate or substrate assembly.
A method of manufacturing a semiconductor structure, the method comprising:
- providing a semiconductor substrate or substrate assembly;
- providing a precursor composition comprising one or more organic solvents and one or more complexes of the formula:
- LyRhYz,
- wherein:
- each L group is independently a neutral or anionic ligand;
- each Y group is independently a pi bonding ligand selected from the group of CO, NO, CN, CS, N2, PX3, PR3, P(OR)3, AsX3, AsR3, As(OR)3, SbX3, SbR3, Sb(OR)3,NHxR3-x, CNR, and RCN, wherein R is an organic group, X is a halide, and x=0 to 3;
- y=1 to 4;
- z=0 to 4;
- and
- providing a nonhydrogen reaction gas;
- and
- vaporizing the precursor composition to form vaporized precursor composition;
- and
- directing the vaporized precursor composition toward the semiconductor substrate or substrate assembly to form a rhodium-containing layer in the presence of the nonhydrogen reaction gas on a surface of the semiconductor substrate or substrate assembly.
A method of forming a layer on a substrate, the method comprising:
- providing a substrate;
- providing a precursor composition comprising one or more complexes of the formula:
- LyRhYz,
- wherein:
- each L group is independently a neutral or anionic ligand;
- each Y group is independently a pi bonding ligand selected from the group of CO, NO, CN, CS, N2, PX3, PR3, P(OR)3, AsX3, AsR3, As(OR)3, SbX3, SbR3, Sb(OR)3, NHxR3-x, CNR, and RCN, wherein R is an organic group, X is a halide, and x=0 to 3;
- y=1 to 4;
- and
- z=0 to 4;
- providing a nonhydrogen reaction gas;
- and
- forming a rhodium-containing layer from the precursor composition in the presence of the nonhydrogen reaction gas on a surface of the substrate.
A method of forming a layer on a substrate, the method comprising:
- providing a substrate;
- providing a precursor composition comprising one or more solvents and one or more complexes of the formula:
- LyRhYz,
- wherein:
- each L group is independently a neutral or anionic ligand;
- each Y group is independently a pi bonding ligand selected from the group of CO, NO, CN, CS, N2, PX3, PR3, P(OR)3, AsX3, AsR3, As(OR)3, SbX3, SbR3, Sb(OR)3, NHxR3-x, CNR, and RCN, wherein R is an organic group, X is a halide, and x=0 to 3;
- y=1 to 4;
- and
- z=0 to 4;
- providing a nonhydrogen reaction gas;
- and
- vaporizing the precursor composition to form vaporized precursor composition;
- and
- directing the vaporized precursor composition toward the substrate to form a rhodium-containing layer in the presence of the nonhydrogen reaction gas on a surface of the substrate.
A method of forming a layer on a substrate, the method comprising:
- providing a substrate;
- providing a precursor composition comprising one or more complexes of the formula:
- LyRhYz,
- wherein:
- each L group is independently a neutral or anionic ligand;
- each Y group is independently a pi bonding ligand selected from the group of CO, NO, CN, CS, N2, PX3, PR3, P(OR)3, AsX3, AsR3, As(OR)3, SbX3, SbR3, Sb(OR)3, NHxR3-x, CNR, and RCN, wherein R is an organic group, X is a halide, and x=0 to 3;
- with the proviso that L is not cyclopentadienyl when Y is CO;
- y=1 to 4;
- and
- z=1 to 4;
- and
- forming a rhodium-containing layer from the precursor composition on a surface of the substrate.
A method of manufacturing a semiconductor structure, the method comprising:
- providing a semiconductor substrate or substrate assembly;
- providing a precursor composition comprising one or more complexes of the formula:
- LyRhYz,
- wherein:
- each L group is independently a neutral or anionic ligand;
- each Y group is independently a pi bonding ligand selected from the group of CO, NO, CN, CS, N2, PX3, PR3, P(OR)3, AsX3, AsR3, As(OR)3, SbX3, SbR3, Sb(OR)3, NHxR3-x, CNR, and RCN, wherein R is an organic group, X is a halide, and x=0 to 3;
- with the proviso that L is not cyclopentadienyl when Y is CO;
- y=1 to 4;
- and
- z=1 to 4;
- and
- forming a rhodium-containing layer from the precursor composition on a surface of the semiconductor substrate or substrate assembly.
Dependencies are inferred from the claim text.