Semiconductor assisted metal deposition for nanolithography applications
AssigneeThe University of Chicago
InventorsTijana Rajh, Natalia Meshkov, Jovan M. Nedelijkovic, Laura R. Skubal, David M. Tiede, Marion Thurnauer
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Abstract
An article of manufacture and method of forming nanoparticle sized material components. A semiconductor oxide substrate includes nanoparticles of semiconductor oxide. A modifier is deposited onto the nanoparticles, and a source of metal ions are deposited in association with the semiconductor and the modifier, the modifier enabling electronic hole scavenging and chelation of the metal ions. The metal ions and modifier are illuminated to cause reduction of the metal ions to metal onto the semiconductor nanoparticles.
Claims10
A method of forming nanoparticle-sized material components, comprising the steps of:
- providing a semiconductor oxide substrate comprised of nanoparticles of said semiconductor oxide;
- depositing a modifier onto said nanoparticles;
- depositing a source of metal ions in association with said semiconductor and said modifier, said modifier enabling electronic hole scavenging and chelation of said metal ions;
- and
- illuminating said metal ions and modifier to cause reduction of said metal ions to metal onto said semiconductor nanoparticles.
Dependencies are inferred from the claim text.