Method for dual damascene process using electron beam and ion implantation cure methods for low dielectric constant materials

A method for dual damascene metallization comprising the steps of:

• depositing a first layer of dielectric material on a wafer substrate;
• curing said first layer of dielectric material such that a topmost layer of said first layer of dielectric material is converted into a first etch stop;
• applying a photoresist pattern to said first layer of dielectric material to form a pattern for a via opening;
• etching said first etch stop in said first layer of dielectric material to form said via opening in said first layer of dielectric material;
• depositing a second layer of dielectric material to said first layer of dielectric material comprising said via opening;
• curing said second layer of dielectric material such that a topmost layer of said second layer of dielectric material is converted into a second etch stop;
• applying a photoresist pattern to said second layer of dielectric material to form a pattern for a trench opening;
• etching said second and first layers of dielectric material to form a trench and via, respectively;
• and
• filling said via and trench with a metal.