Process for chemical vapor deposition of tungsten onto a titanium nitride substrate surface
AssigneeTokyo Electron Limited
InventorDouglas A. Webb
Life of this patent
Estimating the term…
Abstract
A process for chemical vapor deposition of blanket tungsten thin films on titanium nitride proceeds by hydrogen reduction of tungsten hexafluoride at temperatures between 200° C. and 500° C. Tungsten film nucleation is preferably facilitated by a hydrogen plasma treatment of the titanium nitride surface of the substrate. The plasma treatment may be carried out in a separate etch chamber and transferred to a tungsten CVD chamber without intervening exposure to air, or, preferably, is carried out with a low energy etch performed with the substrate mounted on a susceptor in the chamber of the tungsten CVD reactor at which the tungsten film is to be applied.
Claims12
A method of accelerating the nucleation of tungsten, without the use of silane, in the chemical vapor deposition of the tungsten onto a TiN surface of a substrate in a vacuum apparatus having at least one CVD process chamber, the method comprising the steps of:
- subjecting the TiN surface of the substrate to a hydrogen plasma treatment;
- then
- injecting H2 and WF6 into the CVD process chamber having the substrate mounted therein while maintaining conditions effective to produce a reduction reaction resulting in deposition of tungsten onto the TiN surface.
A method of accelerating the nucleation of tungsten, without the use of silane, in the chemical vapor deposition of the tungsten onto a TiN surface of a substrate in a CVD apparatus having at least one process chamber, the method comprising the steps of:
- without previously subjecting the TiN surface to any other plasma cleaning process after the substrate having the TiN surface thereon is placed in the CVD apparatus, subjecting the TiN surface of the substrate to a hydrogen plasma treatment in a CVD processing chamber of the apparatus prior to the deposition of the tungsten onto the TiN surface;
- then
- without substantially exposing the TiN surface to an oxygen containing environment, injecting H2 and WF6 into the CVD process chamber containing the substrate while maintaining conditions effective to produce a reduction reaction resulting in deposition of tungsten onto the TiN surface.
A method of accelerating the nucleation and deposition rate of tungsten, without the use of silane, during the chemical vapor deposition of the tungsten onto an air-exposed TiN surface of a silicon wafer substrate in a CVD apparatus having at least one process chamber, the method comprising the steps of:
- plasma etching the TiN surface of the substrate by subjecting the TiN surface of the substrate to a hydrogen plasma treatment;
- then
- injecting H2 and WF6 into a CVD process chamber having the substrate mounted therein while maintaining the temperature of the surface of the substrate at not less than 200° C. and not more than approximately 400° C. to produce a reduction reaction resulting in tungsten deposition onto the TiN surface of the substrate.
Dependencies are inferred from the claim text.