Method for making semiconductor device

A method for making a semiconductor device, comprising:

• a step (A) of forming insulating film on a semiconductor substrate and then a plurality of lower wirings on said insulating film;
• a step (B) of forming first insulating film with an overhang form to cover the surface of said lower wirings and said insulating film by using a plasma enhanced chemical vapor deposition method;
• a step (C) of forming first organic-included coating insulating film on said first insulating film by using a rotational coating method,
• a step (D) of removing a part of said first organic-included coating insulating film by a rotational removing method;
• a step (E) of baking said first organic-included coating insulating film;
• a step (F) of forming second organic-included coating insulating film on said first insulating film and said first organic-included coating insulating film using a rotational coating method;
• a step (G) of baking said second organic-included coating insulating film;
• a step (H) of etching back a part of said first organic-included coating insulating film and said second organic-included coating insulating film by using a dry-etching method;
• a step (I) of forming second insulating film on said first insulating film, said organic-included coating insulating film and said second organic-included coating insulating film by using the plasma enhanced chemical vapor deposition method;
• and
• a step (J) of polishing said second insulating film by using a chemical mechanical polishing method to planarize the surface.

A method for making a semiconductor device, comprising:

• a step (A) of forming insulating film on a semiconductor substrate and then a plurality of lower wirings on said insulating film;
• a step (B) of forming first insulating film with an overhang form to cover the surface of said lower wirings and said insulating film by using a plasma enhanced chemical vapor deposition method;
• a step (C) of forming organic-included coating insulating film on said first insulating film by using a rotational coating method;
• a step (D) of baking said organic-included coating insulating film;
• a step (E) of etching back a part of said organic-included coating insulating film by using a dry-etching method;
• a step (F) of forming second insulating film on said first insulating film and said organic-included coating insulating film by using the plasma enhanced chemical vapor deposition method;
• and
• a step (G) of polishing said second insulating film by using a chemical mechanical polishing method to planarize the surface, wherein:
• said plasma enhanced chemical vapor deposition method to form said first insulating film in said step (B) uses monosilane (SiH4) and oxygen or oxygen-included compound as raw materials.

A method for making a semiconductor device, comprising:

• a step (A) of forming insulating film on a semiconductor substrate and then a plurality of lower wirings on said insulating film;
• a step (B) of forming first insulating film with an overhang form to cover the surface of said lower wirings and said insulating film by using a plasma enhanced chemical vapor deposition method;
• a step (C) of forming first orsanic-included coating insulating film on said first insulating film by using a rotational coating method;
• a step (D) of removing a part of said first organic-included coating insulating film by a rotational removing method;
• a step (E) of baking said first organic-included coating insulating film;
• a step (F) of forming second organic-included coating insulating film on said first insulating film and said first organic-included coating insulating film using a rotational coating method;
• a step (G) of baking said second organic-included coating insulating film;
• a step (H) of etching back a part of said first organic-included coating insulating film and said second organic-included coating insulating film by using a dry-etching method;
• a step (I) of forming second insulating film on said first insulating film said organic-included coating insulating film and said second organic-included coating insulating film by using the plasma enhanced chemical vapor deposition method;
• and
• a step (J) of polishing said second insulating film by using a chemical mechanical polishing method to planarize the surface, wherein:
• said plasma enhanced chemical vapor deposition method to form said first insulating film in said step (B) uses monosilane (SiH4) and oxygen or oxygen-included compound as raw materials.

A method for making a semiconductor device, comprising:

• a step (A) of forming insulating film on a semiconductor substrate and then a plurality of lower wirings on said insulating film;
• a step (B) of forming first insulating film with an overhang form to cover the surface of said lower wirings and said insulating film by using a plasma enhanced chemical vapor deposition method;
• a step (C) of forming organic-included coating insulating film on said first insulating film by using a rotational coating method;
• a step (D) of baking said organic-included coating insulating film;
• a step (E) of etching back a part of said organic-included coating insulating film by using a dry-etching method;
• a step (F) of forming second insulating film on said first insulating film and said organic-included coating insulating film by using the plasma enhanced chemical vapor deposition method;
• and
• a step (G) of polishing said second insulating film by using a chemical mechanical polishing method to planarize the surface, wherein:
• said first insulating film is silicon dioxide film whose surface is nitrified.

A method for making a semiconductor device, comprising:

• a step (A) of forming insulating film on a semiconductor substrate and then a plurality of lower wirings on said insulating film;
• a step (B) of forming first insulating film with an overhang form to cover the surface of said lower wirings and said insulating film by using a plasma enhanced chemical vapor deposition method;
• a step (C) of forming first organic-included coating insulating film on said first insulating film by using a rotational coating method;
• a step (D) of removing a part of said first organic-included coating insulating film by a rotational removing method;
• a step (E) of baking said first organic-included coating insulating film;
• a step (F) of forming second organic-included coating insulating film on said first insulating film and said first organic-included coating insulating film using a rotational coating method;
• a step (G) of baking said second organic-included coating insulating film;
• a step (H) of etching back a part of said first organic-included coating insulating film and said second organic-included coating insulating film by using a dry-etching method;
• a step (I) of forming second insulating film on said first insulating film, said organic-included coating insulating film and said second organic-included coating insulating film by using the plasma enhanced chemical vapor deposition method;
• and
• a step (J) of polishing said second insulating film by using a chemical mechanical polishing method to planarize the surface, wherein:
• said first insulating film is silicon dioxide film whose surface is nitrified.

A method for making a semiconductor device, comprising:

• a step (A) of forming insulating film on a semiconductor substrate and then a plurality of lower wirings on said insulating film;
• a step (B) of forming first insulating film with an overhang form to cover the surface of said lower wirings and said insulating film by using a plasma enhanced chemical vapor deposition method;
• a step (C) of forming organic-included coating insulating film on said first insulating film by using a rotational coating method;
• a step (D) of baking said organic-included coating insulating film;
• a step (E) of etching back a part of said organic-included coating insulating film by using a dry-etching method;
• a step (F) of forming second insulations film on said first insulating film and said organic-included coating insulating film by using the plasma enhanced chemical vapor deposition method;
• and
• a step (G) of polishing said second insulating film by using a chemical mechanical polishing method to planarize the surface, wherein:
• said first insulating film is silicon oxide-nitride film.

A method for making a semiconductor device, comprising:

• a step (A) of forming insulating film on a semiconductor substrate and then a plurality of lower wirings on said insulating film;
• a step (B) of forming first insulating film with an overhang form to cover the surface of said lower wirings and said insulating film by using a plasma enhanced chemical vapor deposition method;
• a step (C) of forming first organic-included coating insulating film on said first insulating film by using, a rotational coating method;
• a step (D) of removing a part of said first organic-included coating insulating film by a rotational removing method;
• a step (E) of baking said first organic-included coating insulating film;
• a step (F) of forming second organic-included coating insulating film on said first insulating, film and said first organic-included coating insulating film using a rotational coating method;
• a step (G) of baking said second organic-included coating insulating film;
• a step (H) of etching back a part of said first organic-included coating insulating film and said second organic-included coating insulating film by using a dry-etching method;
• a step (I) of forming second insulating film on said first insulating film, said organic-included coating insulating film and said second organic-included coating insulating film by using the plasma enhanced chemical vapor deposition method;
• and
• a step (J) of polishing said second insulating film by using a chemical mechanical polishing method to planarize the surface, wherein:
• said first insulating film is silicon oxide-nitride film.