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US 6,271,104 B1Granted
Fabrication of defect free III-nitride materials
AssigneeMP Technologies, LLC
InventorsManijeh Razeghi, Patrick Kung
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Abstract
The subject invention involves a method of preparing defect-free semiconductor material layers by growing a semiconductor material buffer layer on a substrate, masking with a dielectric film, and etching to open spaced seed windows. Another layer of a III-V or II-VI material is then grown in the longitudinal direction from the seed window, followed by lateral growth of the same material to form an epitaxial film and a structure which provides a defect free surface for further epitaxial layers.
Claims5
A method of preparing a semiconductor wafer, comprising the steps of:
- growing a buffer layer on a substrate;
- growing a barrier layer on said buffer layer;
- etching a pattern of openings in said barrier layer;
- growing a III-V material in the openings in a longitudinal direction from said openings and then in a lateral direction from said openings to form a continuous layer;
- and
- growing a semiconductor device on said continuous layer.
3 more elements
Dependencies are inferred from the claim text.