Solid state image sensor and method for fabricating the same
AssigneeLG Semicon Co., Ltd.
InventorChun Tak Lee
Life of this patent
Estimating the term…
Abstract
Solid state image sensor having photodiode regions for converting optical image signal into an electrical signal and charge coupled device regions for transferring video charges generated in the photodiode regions in one direction, including first microlens layers spaced from one another and formed over the photodiode regions to be opposite thereto for focusing lights onto the photodiode regions, and second microlens layers formed of a material having a refractive index greater than the first microlens layers on an entire surface of the first microlens layers for focusing lights incident to edge portions of the first microlens layers and spaces between the first microlens layers onto the photodiode regions.
Claims10
A method for fabricating a solid state image sensor comprising the steps of:
- (1) attaching a UV tape on a wafer after forming first microlens layers opposite to photodiode regions respectively and second microlens layers on an entire surface inclusive of the first microlens layers;
- (2) subjecting the wafer to die sawing along a scribe line on the wafer for individualization of devices;
- (3) directing a UV ray onto an entire surface of the wafer directly, to harden an adhesive composition on the UV tape for the first time, and to harden the adhesive composition again by the UV ray reflected at the second microlens layer;
- and,
- (4) attaching a remove tape on the UV tape passed through the step (3) and removing the UV tape and foreign residual matters using the remove tape.
Dependencies are inferred from the claim text.