Method and device for improved salicide resistance on polysilicon gates

A method for forming a gate electrode comprising the steps of:

• providing a substrate with an insulative layer deposited thereon;
• forming a gate layer on the insulative layer;
• depositing a thin first spacer layer on the gate layer and the substrate;
• depositing a thin second spacer layer on the thin first spacer layer;
• removing a portion of the thin second spacer layer to form thin second spacers;
• removing a portion of the thin first spacer layer to form thin first spacers;
• depositing a thin third spacer layer on the gate layer, the thin first spacers and the thin second spacers;
• depositing a thick fourth spacer layer on the thin third spacer layer;
• removing a portion of the thick fourth spacer layer to form recessed thick fourth spacers;
• removing a portion of the thin third spacer layer to form recessed third spacers;
• forming a protective layer on the substrate and gate layer;
• removing a portion of the thin second spacers to form recessed thin second spacers;
• removing the protective layer and removing a portion of the thin first spacers to form recessed thin first spacers;
• depositing a layer of reactant on the gate layer;
• annealing the layer of reactant and the gate layer to form a conductive layer;
• and,
• removing the unreacted reactant layer.