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US 6,271,078 B1Granted
Simplifying conductive plate/via isolation
AssigneeTexas Instruments Incorporated
InventorsStephen W. Russell, Antonio L. P. Rotondaro, Donald L. Plumton, Duane E. Carter
Life of this patent
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Abstract
A dry etch using CFx in an O2-rich environment will clean the contact/via at the same time it retracts a layer of TiN enclosed in the dielectric layer, such as the plate layer in a Capacitor-Under-Bitline DRAM cell.
Claims11
A fabrication method, comprising the steps of:
- (a.) etching an opening into a layer of dielectric containing a conductive structure;
- (b.) performing a dry etch which isotropically removes portions of said conductive structure which are adjacent said opening, wherein said step of performing a dry etch cleans residue produced by said step of etching an opening from said opening.
A fabrication method, comprising the steps of:
- (a.) forming an array of capacitors and covering said array of capacitors with a first dielectric;
- (b.) forming an opening through said first dielectric and through a portion of one of said capacitors, to contact a conductive structure underlying said one of said capacitors;
- (c.) performing a dry etch which isotropically etches portions of said one of said capacitors to produce a void adjacent to said opening;
- wherein said dry etch cleans said opening, of materials produced by said step of forming an opening.
1 more element
Dependencies are inferred from the claim text.