US 6,271,077 B1 · Thin film deposition method, capacitor device and method for fabricating the same, and semiconductor device and method for fabricating the same

Abstract

The present invention relates to semiconductor techniques using high dielectric oxides, more specifically to a thin film forming method for forming a thin film which is suitable as the electrodes of the oxide high dielectrics, a capacitor device using the oxide high dielectrics and a method for fabricating the same, an a semiconductor device using the capacitor device and a method for fabricating the semiconductor device. The capacitor device comprises at least one of a pair of electrodes which is formed of a material containing titanium nitride of (200) orientation. This permits the capacitor device to have good quality even in a case that the capacitor dielectric film is formed of a high dielectric thin film grown in an oxidizing atmosphere. The capacitor device includes the electrodes of titanium nitride film, whereby the electrodes can be patterned by RIE, which much improves processing precision of the electrode patterning, and throughputs.

Claims17

Dependent claims

A method for fabricating a capacitor device comprising:

an insulation film forming step of forming an insulation film on a substrate, the insulation film having a contact hole reaching the substrate formed in a first region;
a first diffusion preventive film forming step of forming a first diffusion preventive film in the contact hole and on the insulation film in a second region adjacent to the first region, the first diffusion preventive film being for preventing a material forming the substrate from diffusing toward a device to be formed on the insulation film;
a first electrode forming step of forming a first electrode on the first diffusion preventive film;
a second diffusion preventive film forming step of forming a second diffusion preventive film selectively on part of the first electrode in the first region, the second diffusion preventive film being for preventing oxygen from diffusing in the second diffusion preventive film;
a dielectric film forming step of forming in an oxidizing atmosphere a dielectric film on the first electrode in the second region and on the second diffusion film in the first region;
and
a second electrode forming step of forming a second electrode on the dielectric film.

4 more elements

Dependencies are inferred from the claim text.

Thin film deposition method, capacitor device and method for fabricating the same, and semiconductor device and method for fabricating the same

Life of this patent

Thin film deposition method, capacitor device and method for fabricating the same, and semiconductor device and method for fabricating the same

Life of this patent

Abstract

Claims17