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US 6,271,065 B1Granted
Method directed to the manufacture of an SOI device
AssigneeMitsubishi Denki Kabushiki Kaisha
InventorsShoichi Miyamoto, Takashi Ipposhi
Life of this patent
Estimating the term…
Abstract
On an insulating film a mesa-isolation silicon layer is formed, in which a channel region and source/drain regions ar included. A gate insulating film and a conducting layer as a part of a gate electrode are stacked on the mesa-isolation silicon layer. A sidewall of an insulating material is formed on side surfaces of the mesa-isolation silicon layer, gate insulating film, and conducting layer at an end portion of the channel region of the mesa-isolation silicon layer, and a gate electrode is formed on the conducting layer.
Claims18
A method of manufacturing a semiconductor device, comprising the steps of:
- sequentially stacking an SOI layer, a gate insulating film, and a conducting layer, each having a predetermined thickness and the same surface area, on an insulating film;
- performing anisotropic etching of said SOI layer, said gate insulating film, and said conducting layer by using a predetermined mask pattern;
- oxidizing side surfaces of at least said SOI layer and said conducting layer;
- removing said mask pattern;
- depositing an insulating material on said insulating film and performing anisotropic etching to form a sidewall on said oxidized side surfaces of said SOI layer and said conducting layer;
- and
- forming a gate electrode in contact with said conducting layer.
4 more elements
A method of manufacturing a semiconductor device, comprising the steps of:
- sequentially stacking an SOI layer, a gate insulating film, a conducting layer, and a nitride film, each having a predetermined thickness and the same surface area, on an insulating film;
- performing anisotropic etching of said nitride film and said conducting layer by using a predetermined mask pattern;
- selectively oxidizing at least said SOI layer and said conducting layer;
- forming a first sidewall of nitride film on a side surface of at least said nitride film;
- performing anisotropic etching of said gate insulating film and said SOI layer by using said nitride film and said first sidewall as an etching mask;
- oxidizing a side surface of said SOI layer;
- etching away said nitride film and said first sidewall;
- depositing an insulating material on said insulating film and performing anisotropic etching to form a second sidewall on said side surface of said SOI layer and a side surface of said conducting layer;
- and
- forming a gate electrode in contact with said conducting layer.
7 more elements
A method of manufacturing a semiconductor device, comprising the steps of:
- sequentially stacking an SOI layer, a gate insulating film, a first conducting layer, a nitride film, and a second conducting layer, each having a predetermined thickness and the same surface area, on an insulating film;
- performing anisotropic etching of said first conducting layer, said nitride film, and said second conducting layer by using a predetermined mask pattern;
- selectively oxidizing at least said SOI layer, said first conducting layer, and said second conducting layer;
- forming a first sidewall of nitride film on a side surface of at least said nitride film;
- performing anisotropic etching of said second conducting layer, said gate insulating film, and said SOI layer by using said nitride film and said first sidewall as an etching mask;
- oxidizing a side surface of said SOI layer;
- etching away said nitride film and said first sidewall;
- depositing an insulating material on said insulating film and performing anisotropic etching to form a second sidewall on said side surface of said SOI layer and a side surface of said first conducting layer;
- and
- forming a gate electrode in contact with said first conducting layer.
7 more elements
A method of manufacturing a semiconductor device, comprising the steps of:
- sequentially stacking a first insulating film and a polysilicon layer on an SOI layer on a second insulating film;
- patterning said polysilicon layer, said first insulating film, and said SOI layer by using a predetermined mask pattern;
- oxidizing side surfaces of at least said SOI layer and said polysilicon layer;
- removing said mask pattern;
- forming a third insulating film on said second insulating film and forming a sidewall on said oxidized side surfaces of said SOI layer and said polysilicon layer;
- and
- forming a gate electrode in contact with said polysilicon layer.
4 more elements
A method of manufacturing a semiconductor device, comprising the steps of:
- sequentially stacking a first insulting film, a polysilicon layer and a nitride film on an SOI layer on a second insulating film;
- patterning said nitride film and said polysilicon layer by using a predetermined mask pattern;
- selectively oxidizing at least said SOI layer and said polysilicon layer;
- forming a first sidewall of nitride film on a side surface of at least said nitride film;
- patterning said first insulating film and said SOI layer by using said nitride film and said first sidewall as an etching mask;
- oxidizing a side surface of said SOI layer;
- removing said nitride film and said first sidewall;
- forming a third insulating film on said second insulating film and forming a second sidewall on said side surfaces of said SOI layer and a side surface of said polysilicon layer;
- and
- forming a gate electrode in contact with said polysilicon layer.
7 more elements
A method of manufacturing a semiconductor device, comprising the steps of:
- sequentially stacking a first insulting film, a polysilicon layer, a nitride film, and a second polysilicon layer on an SOI layer on a second insulating film;
- patterning said second polysilicon layers, said nitride film, and said first polysilicon layer by using a predetermined mask pattern;
- selectively oxidizing at least said SOI layer, said first polysilicon layer, and said second polysilicon layer;
- forming a first sidewall of nitride film on a side surface of at least said nitride film;
- etching said second polysilicon layer, said first insulating film, and said SOI layer by using said nitride film and said first sidewall as an etching mask;
- oxidizing a side surface of said SOI layer;
- removing said nitride film and said first sidewall;
- forming a third insulating film on said second insulating film and forming a second sidewall on said side surfaces of said SOI layer and a side surface of said first polysilicon layer;
- and
- forming a gate electrode in contact with said polysilicon layer.
7 more elements
Dependencies are inferred from the claim text.