Method for reducing dark current effects in a charge couple device
AssigneeInternational Business Machines Corporation
InventorsArne W. Ballantine, George A. Dunbar, III, James V. Hart, III, Donna K. Johnson, Glenn C. MacDougall
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Abstract
The dark current defects in a charge couple device are reduced by employing a hydrogen anneal followed by depositing a silicon nitride barrier layer by RTCVD.
Claims40
A method for reducing dark current defects in a charge couple device which comprises:
- a) subjecting the charge couple device to an anneal in hydrogen at a temperature of about 850° C. to about 950° C. for at least 20 minutes;
- and
- wherein the anneal is carried out at a pressure of about 100 torr to about 800 torr;
- and
- b) then depositing a barrier layer of silicon nitride by RTCVD to a thickness of about 250 to about 350 angstroms.
A method for reducing dark current defects in a charge couple device which comprises:
- a) subjecting the charge couple device to an anneal in hydrogen at a temperature of about 850° C. to about 950° C. for at least 20 minutes;
- and
- b) then depositing a barrier layer of silicon nitride by RTCVD to a thickness of about 250 to about 350 angstroms;
- wherein the RTCVD is carried out at a temperature of about 650 to about 850° C.
A method for reducing dark current defects in a charge couple device which comprises:
- a) subjecting the charge couple device to an anneal in hydrogen at a temperature of about 850° C. to about 950° C. for at least 20 minutes;
- and
- b) then depositing a barrier layer of silicon nitride by RTCVD to a thickness of about 250 to about 350 angstroms;
- and
- wherein the RTCVD is carried out at a pressure of about 25 to about 120 torr.
A method for reducing dark current defects in a charge couple device which comprises:
- a) subjecting the charge couple device to an anneal in hydrogen at a temperature of about 850° C. to about 950° C. for at least 20 minutes;
- and
- b) then depositing a barrier layer of silicon nitride by RTCVD to a thickness of about 250 to about 350 angstroms;
- and
- wherein the RTCVD is carried out while the device is rotated at a speed of about 30 to about 45 rpm.
A method for reducing dark current defects in a charge couple device which comprises:
- a) subjecting the charge couple device to an anneal in hydrogen at a temperature of about 850° C. to about 950° C. for at least 20 minutes;
- and
- b) then depositing a barrier layer of silicon nitride by RTCVD to a thickness of about 250 to about 350 angstroms;
- and
- wherein the RTCVD is carried out employing SiH4 and NH3.
A method for reducing dark current defects in a charge couple device which comprises:
- a) subjecting the charge couple device to an anneal in hydrogen at a temperature of about 850° C. to about 950° C. for at least 20 minutes;
- and
- b) then depositing a barrier layer of silicon nitride by RTCVD to a thickness of about 250 to about 350 angstroms;
- and which further includes a prepurge in H2 followed by nucleation in NH3 prior to the RTCVD and a purge in NH3 and a purge in N2 after the RTCVD.
A method for reducing dark current defects in a charge couple device which comprises:
- a) subjecting the charge couple device to an anneal in hydrogen at a temperature of about 850° C. to about 950° C. for at least 20 minutes;
- and
- b) then depositing a barrier layer of silicon nitride by RTCVD to a thickness of about 250 to about 350 angstroms;
- and
- wherein the charge couple device comprises a P-well buried channel, channel stop, thermally grown oxide barrier, a doped polycrystalline silicon layer and oxidized polycrystalline silicon barrier layer.
Dependencies are inferred from the claim text.