Back to results
US 6,271,051 B1Granted
Light-emitting diode, light-emitting diode array, and method of their fabrication
AssigneeOki Data Corporation
InventorsMitsuhiko Ogihara, Yukio Nakamura, Masumi Taninaka, Hiroshi Hamano
Life of this patent
Estimating the term…
Abstract
A compound semiconductor layer of a first conductivity type is formed on a substrate, and a diffusion region of a second conductivity type is formed on the compound semiconductor layer. The light-emitting diode has a high emitted light power, using a large-diameter wafer.
Claims14
A method of fabricating a light-emitting diode comprising the steps of:
- forming a compound semiconductor layer of a first conductivity type on a substrate at least a surface portion of which is formed of silicon, said compound semiconductor layer having a depth;
- and
- forming a diffusion region of a second conductivity type in the compound semiconductor layer as a light emitting layer;
- wherein said diffusion region is formed by solid-phase diffusion, and is formed from a surface of said compound semiconductor layer to a depth of 20 to 60% of the depth of said compound semiconductor layer.
1 more element
A method of fabricating a light-emitting diode array comprising the steps of:
- forming a compound semiconductor layer of a first conductivity type on a substrate at least a surface portion of which is formed of silicon, said compound semiconductor layer having a depth;
- and
- forming diffusion regions of a second conductivity type in the compound semiconductor layer as a light emitting layer, said diffusion regions being aligned to form an array;
- wherein said diffusion regions are formed by solid-phase diffusion, and are formed from a surface of said compound semiconductor layer to a depth of 20 to 60% of the depth of said compound semiconductor layer.
1 more element
A method of fabricating a light-emitting diode comprising the steps of:
- forming a compound semiconductor layer of a first conductivity type on a substrate at least a surface portion of which is formed of silicon;
- and
- forming a diffusion region of a second conductivity type in the compound semiconductor layer as a light emitting layer;
- wherein said diffusion region is formed from a surface of said compound semiconductor layer to a depth of 20 to 60% of the thickness of said compound semiconductor layer;
- wherein said compound semiconductor layer is formed to a thickness of 3.5 μm or less, and
- said diffusion region is formed by solid-phase diffusion.
3 more elements
A method of fabricating a light-emitting diode array comprising the steps of:
- forming a compound semiconductor layer of a first conductivity type on a substrate at least a surface portion of which is formed of silicon;
- and
- forming diffusion regions of a second conductivity type in the compound semiconductor layer as a light emitting layer, said diffusion regions being aligned to form an array;
- wherein said diffusion are formed from a surface of said compound semiconductor layer to a depth of 20 to 60% of the thickness of said compound semiconductor layer;
- wherein said compound semiconductor layer is formed to a thickness of 3.5 μm or less, and
- said diffusion regions are formed by solid-phase diffusion.
3 more elements
Dependencies are inferred from the claim text.