Method of forming pattern

A method of forming a pattern which comprises the steps of:

• forming an organosilicon film on one of a metallic wiring layer and a silicon-based material film, said organosilicon film containing an organosilicon compound having a silicon-silicon bond in a backbone chain thereof and a glass transition temperature of 0° C. or more;
• forming a resist pattern on said organosilicon film;
• transcribing said resist pattern on said organosilicon film through an etching of said organosilicon film by making use of an etching gas containing at least one atom selected from the group consisting of chlorine, bromine, and iodine;
• and
• etching the one of the metallic wiring layer and the silicon-based material film by making use of at least said organosilicon film as an etching mask to form a metallic wiring layer pattern,
• wherein said organosilicon compound has a structure that is represented by the following general formula in a backbone chain thereof:
• wherein R1, R2, R3, R4 and R5 may be the same or different and are individually a hydrogen atom, or a substituted or unsubstituted hydrocarbon group having not more than three carbon atoms;
• R6 is hydrogen atom or a substituted or unsubstituted aliphatic hydrocarbon group having 1 to 20 carbon atoms;
• and n is a positive integer.