Formation of this film capacitors
AssigneeMicroCoating Technologies, Inc.
InventorsAndrew T. Hunt, John S. Flanagan, George A. Neuman
Life of this patent
Estimating the term…
Abstract
Thin layer capacitors are formed from a first flexible metal layer, a dielectric layer between about 0.03 and about 2 microns deposited thereon, and a second flexible metal layer deposited on the dielectric layer. The first flexible metal layer may either be a metal foil, such as a copper, aluminum, or nickel foil, or a metal layer deposited on a polymeric support sheet. Depositions of the layers is by or is facilitate by combustion chemical vapor deposition or controlled atmosphere chemical vapor deposition.
Claims20
A method of providing a multi-capacitor structure comprising
- providing a three-layer structure (a) comprising, in sequence, a first electrically conductive layer, a first dielectric material layer having a thickness of 0.03 to about 2 M and a second electrically conductive layer,
- patterning said first electrically conductive layer so as to form a structure (b) having discrete electrically conductive patches on a first side of said first dielectric material layer,
- embedding the side of said structure (b) having said electrically conductive patches into a second dielectric material to support said structure (b) during subsequent processing, thereby forming a structure (c), and
- patterning said second electrically conductive layer of said structure (c) so as to form a structure (d) having discrete electrically conductive patches on a second side of said first dielectric material layer.
A method of providing a multi-capacitor structure comprising
- providing a three-layer structure (a) comprising, in sequence, a first electrically conductive layer, a first dielectric material layer having a thickness of 0.03 to about 2 M and a second electrically conductive layer,
- patterning said first electrically conductive layer so as to form a structure (b) having discrete electrically conductive patches on a first side of said first dielectric material layer,
- embedding the side of said structure (b) having said electrically conductive patches into a second dielectric material to support said structure (b) during subsequent processing, thereby forming a structure (c),
- patterning said second electrically conductive layer of said structure (c) so as to form a structure (d) having discrete electrically conductive patches on a second side of said first dielectric material layer, and
- then patterning exposed portions of said dielectric material layer to form a structure (e).
Dependencies are inferred from the claim text.