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US 6,270,587 B1Granted
Epitaxial wafer having a gallium nitride epitaxial layer deposited on semiconductor substrate and method for preparing the same
AssigneeSumitomo Electric Industries, Ltd.
InventorsKensaku Motoki, Masato Matsushima, Katsushi Akita, Mitsuru Shimazu, Kikurou Takemoto, Hisashi Seki, Akinori Koukitu
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Abstract
The present invention provides an epitaxial wafer comprising a (111) substrate of a semiconductor having cubic crystal structure, a first GaN layer having a thickness of 60 nanometers or more, a second GaN layer having a thickness of 0.1 μm or more and a method for preparing it.
Claims11
An epitaxial wafer comprising a (111) substrate of a semiconductor having a cubic crystal structure, a first GaN layer having a thickness of 60 nanometers or more, and a second GaN layer having a thickness of 0.1 μm or more.
Dependencies are inferred from the claim text.