Method for fabricating a semiconductor structure with reduced leakage current density

A method of fabricating a semiconductor structure comprising the steps of:

• providing a silicon substrate having a surface;
• forming amorphous silicon dioxide on the surface of the silicon substrate;
• providing a metal on the amorphous silicon dioxide;
• heating the semiconductor structure to substantially convert the amorphous silicon dioxide and metal to form an interface comprising a crystaline seed layer adjacent the surface of the silicon substrate;
• forming a single crystal buffer layer utilizing molecular oxygen on a surface of the seed layer;
• and
• forming at least one layer of a single crystal high dielectric constant oxide utilizing activated oxygen on a surface of the buffer layer.

A method of fabricating a semiconductor structure comprising the steps of:

• providing a silicon substrate having a surface;
• forming a single crystal seed layer adjacent the surface of the silicon substrate;
• forming a single crystal buffer layer utilizing molecular oxygen on a surface of the single crystal seed layer, the single crystal buffer layer formed of a metal oxide and molecular oxygen;
• and
• forming a single crystal high dielectric constant oxide utilizing activated oxygen on a surface of the single crystal buffer layer, the single crystal high dielectric constant oxide formed of a metal oxide and activated oxygen.