Chemical mechanical polishing device with a pressure mechanism
AssigneesProMOS Technologies Inc., Mosel Vitelic, Inc., Siemens Aktiengesellschaft
InventorHsiao Che Wu
Life of this patent
Estimating the term…
Abstract
The present invention provides a CMP device with a pressure-controlling mechanism comprising a rotating polishing plate, a slurry supplying system for supplying slurry, a rotating carrier that holds and rotates a silicon wafer such that the wafer surface is polished against the rotating polishing plate and the slurry during a CMP process, and a pressure-controlling mechanism capable of exerting different pressures to different locations on the wafer in response to different polishing rates corresponding to each of the specified locations. By utilizing the CMP device according to the present invention, the polishing rate and finish quality at different locations of the silicon wafer will be more uniform, which in turn contributes to an improved wafer planarizing effect.
Claims16
A chemical mechanical polishing (CMP) device, comprising:
- an automated rotating polishing plate;
- a slurry supplying system for supplying slurry to the surface of the automated rotating polishing plate;
- a rotating carrier with a spindle for holding and rotating a wafer to be polished, which forces the wafer surface into contact with the automated rotating polishing plate and slurry directly during a CMP process;
- and
- a pressure-controlling mechanism for distributing different pressure levels to different contact locations on the surface of the wafer that correspond to different polishing rates.
A chemical mechanical polishing (CMP) device, comprising:
- an automated rotating polishing plate;
- a slurry supplying system for supplying slurry to the surface of the automated rotating polishing plate;
- a rotating carrier with a spindle for holding and rotating a wafer to be polished, which forces the wafer surface into contact with the automated rotating polishing plate and slurry directly during a CMP process;
- an alternating current source having an alternating frequency of a specified range;
- and
- at least one vibrating block electrically coupled to the above alternating current source for exerting a variable pressure force generated through the alternating frequency to a specified contact location of a wafer surface, wherein different contact locations corresponding to different polishing rates.
A chemical mechanical polishing (CMP) device, comprising:
- an automated rotating polishing plate;
- a slurry supplying system for supplying slurry to the surface of the automated rotating polishing plate;
- a rotating carrier with a spindle for holding and rotating a wafer to be polished, which forces the wafer surface into contact with the automated rotating polishing plate and slurry during a CMP process;
- and
- a pressure-controlling mechanism for selectively applying a localized pressure to at least one contact location on a portion of the surface of the wafer to elevate the polishing rate at the contact location.
Dependencies are inferred from the claim text.