Collection devices for plasma immersion ion implantation

A plasma treatment system provided in a cluster tool for implantation, said system comprising:

• a chamber in which a plasma is generated;
• a susceptor having a susceptor face disposed in said chamber to support a substrate comprising a substrate face;
• a perforated shield disposed adjacent to and coplanar with said susceptor for modifying an electric field for accelerating particles toward said substrate face, said perforated shield tending to linearize electric field lines along said substrate face to create a more uniform distribution of particles to be implanted into a depth of said substrate;
• and
• a collection device disposed underlying said perforated shield to collect particles that traverse through said perforated shield, said collection device being at a potential to attract said particles without substantially influencing said linearized electric field, said collection device also preventing a portion of said particles from depositing onto said substrate face, wherein said collection device is biased using a magnitude that is less than a biasing potential between said plasma and said susceptor.

A plasma treatment system provided in a cluster tool for implantation, said system comprising:

• a chamber in which a plasma is generated;
• a susceptor having a susceptor face disposed in said chamber to support a substrate comprising a substrate face;
• a perforated shield disposed adjacent to and coplanar with said susceptor for modifying an electric field for accelerating particles toward said substrate face, said perforated shield tending to linearize electric field lines along said substrate face to create a more uniform distribution of particles to be implanted into a depth of said substrate;
• and
• a collection device disposed underlying said perforated shield to collect particles that traverse through said perforated shield, said collection device being at a potential to attract said particles without substantially influencing said linearized electric field, said collection device also preventing a portion of said particles from depositing onto said substrate face, wherein said collection device is biased using a magnitude that is less than a biasing potential between said plasma and said susceptor.

A method for forming a substrate, said method comprising a method for measuring a distribution of implanted particles, said measuring method comprising:

• providing a substrate onto a face of a susceptor within a plasma immersion ion implantation chamber, said substrate comprising a surface;
• introducing particles in a directional manner toward said substrate where a first portion of said particles implant into substrate to selectively place said ions into a selected depth across a plane of said substrate;
• drawing a second portion of said particles using a perforated shield through said perforated shield disposed adjacent to and coplanar with said face of said susceptor to improve uniformity of said first portion of said particles at said selected depth;
• and
• collecting a portion of said second portion of said particles using a plurality of collection devices surrounding said substrate;
• and
• measuring an electric current from each of said collection devices, said measuring providing a plurality of measured electric current values.