Method of programming a non-volatile memory cell using a current limiter
AssigneeAdvanced Micro Devices, Inc.
InventorsNarbeh Derhacobian, Janet S. Y. Wang, Daniel Sobek, Sameer S. Haddad
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Abstract
A memory cell that includes a substrate that has a first region and a second region with a channel therebetween, wherein the first region generates hot carriers. The memory cell further includes a gate above the channel and a charge trapping region that contains a first amount of charge. A current limiter that limits the number of the generated hot carriers that can flow into the channel, wherein the current limiter does not control the voltage of the second region.
Claims21
A method of programming a memory cell with a substrate that comprises a first region and a second region with a channel therebetween and a gate above said channel, and a charge trapping region that contains a first amount of charge, the method comprising:
- generating hot carriers in said first region;
- and
- limiting the number of said generated hot carriers that flow into said channel, wherein said limiting is accomplished without controlling the voltage of said second region.
A memory cell comprising:
- a substrate that comprises a first region and a second region with a channel therebetween, wherein said first region generates hot carriers;
- a gate above said channel;
- a charge trapping region that contains a first amount of charge;
- and
- a current limiter limiting the number of said generated hot carriers that can flow into said channel, wherein said current limiter does not control the voltage of said second region.
Dependencies are inferred from the claim text.