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US 6,268,631 B1Granted
Glass substrate assembly, semiconductor device and method of heat-treating glass substrate
AssigneeSemiconductor Energy Laboratoty Co., Ltd.
InventorsTakeshi Fukada, Mitsunori Sakama, Satoshi Teramoto
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Abstract
Improved method of heat-treating a glass substrate, especially where the substrate is thermally treated (such as formation of films, growth of films, and oxidation) around or above its strain point. If devices generating heat are formed on the substrate, it dissipates the heat well. An aluminum nitride film is formed on at least one surface of the substrate. This aluminum nitride film acts as a heat sink and prevents local concentration of heat produced by the devices such as TFTs formed on the glass substrate surface.
Claims27
A semiconductor device comprising:
- a substrate having a front surface and a rear surface;
- an insulating film comprising aluminum nitride containing 0.001 to 10 atomic percent of oxygen provided on said front surface of the substrate;
- and
- a transistor provided over said front surface of the substrate, said transistor having at least a channel formation region comprising crystalline silicon, a gate insulating film adjacent to said channel formation region, and a gate electrode adjacent to said channel formation region with said gate insulating film interposed therebetween.
1 more element
A semiconductor device comprising:
- a substrate having a front surface and a rear surface;
- an insulating film comprising aluminum nitride containing 0.001 to 10 atomic percent of oxygen provided on said front surface of the substrate;
- and
- a transistor provided over said front surface of the substrate, said transistor having at least a channel formation region comprising crystalline silicon, a gate insulating film adjacent to said channel formation region, and a gate electrode adjacent to said channel formation region with said gate insulating film interposed therebetween,
- wherein said insulating film comprising aluminum nitride has a thickness of 500 Å to 3 μm.
2 more elements
A semiconductor device comprising:
- a substrate having a front surface and a rear surface;
- an insulating film comprising aluminum nitride containing 0.001 to 10 atomic percent of oxygen provided on said front surface of the substrate;
- and
- a transistor provided over said front surface of the substrate, said transistor having at least a channel formation region, a gate insulating film adjacent to said channel formation region, and a gate electrode adjacent to said channel formation region with said gate insulating film interposed therebetween,
- wherein said insulating film comprising aluminum nitride has a thermal conductivity of 200 Wm−1K−1 or more.
2 more elements
A semiconductor device comprising:
- a substrate having a front surface and a rear surface;
- an insulating film comprising aluminum nitride containing 0.001 to 10 atomic percent of oxygen provided on said rear surface of the substrate;
- and
- a transistor provided over said front surface of the substrate, said transistor having at least a channel formation region comprising crystalline silicon, a gate insulating film adjacent to said channel formation region, and a gate electrode adjacent to said channel formation region with said gate insulating film interposed therebetween.
1 more element
An active matrix type liquid crystal display comprising:
- a substrate having a front surface and a rear surface;
- an insulating film comprising aluminum nitride containing 0.001 to 10 atomic percent of oxygen provided on said front surface of the substrate;
- and
- a transistor provided over said front surface of the substrate, said transistor having at least a channel formation region comprising crystalline silicon, a gate insulating film adjacent to said channel formation region, and a gate electrode adjacent to said channel formation region with said gate insulating film interposed therebetween.
1 more element
An active matrix type liquid crystal display comprising:
- a substrate having a front surface and a rear surface;
- an insulating film comprising aluminum nitride containing 0.001 to 10 atomic percent of oxygen provided on said rear surface of the substrate;
- and
- a transistor provided over said front surface of the substrate, said transistor having at least a channel formation region comprising crystalline silicon, a gate insulating film adjacent to said channel formation region, and a gate electrode adjacent to said channel formation region with said gate insulating film interposed therebetween.
1 more element
An active matrix type liquid crystal display comprising:
- a substrate having a front surface and a rear surface;
- an insulating film comprising aluminum nitride containing 0.001 to 10 atomic percent of oxygen provided on said front surface of the substrate;
- and
- a transistor provided over said front surface of the substrate, said transistor having at least a channel formation region comprising crystalline silicon, a gate insulating film adjacent to said channel formation region, and a gate electrode adjacent to said channel formation region with said gate insulating film interposed therebetween,
- wherein said insulating film comprising aluminum nitride has a thermal conductivity of 200 Wm−1K−1 or more.
2 more elements
An active matrix type liquid crystal display comprising:
- a substrate comprising a glass having a front surface and a rear surface;
- an insulating film comprising aluminum nitride containing 0.001 to 10 atomic percent of oxygen provided on said front surface of the substrate;
- and
- a transistor provided over said front surface of the substrate, said transistor having at least a channel formation region comprising crystalline silicon, a gate insulating film adjacent to said channel formation region, and a gate electrode adjacent to said channel formation region with said gate insulating film interposed therebetween,
- wherein said insulating film comprising aluminum nitride has a thermal conductivity of 200 Wm−1K−1 or more.
2 more elements
An active matrix type liquid crystal display comprising:
- a substrate having a front surface and a rear surface;
- an insulating film comprising aluminum nitride containing 0.001 to 10 atomic percent of oxygen provided on said rear surface of the substrate;
- and
- a transistor provided over said front surface of the substrate, said transistor having at least a channel formation region comprising crystalline silicon, a gate insulating film adjacent to said channel formation region, and a gate electrode adjacent to said channel formation region with said gate insulating film interposed therebetween,
- wherein said insulating film, comprising aluminum nitride containing 0.001 to 10 atomic percent of oxygen, has a thermal conductivity of 200 Wm−1K−1 or more.
2 more elements
An active matrix type liquid crystal display comprising:
- a substrate comprising a glass having a front surface and a rear surface;
- an insulating film comprising aluminum nitride containing 0.001 to 10 atomic percent of oxygen provided on said front surface of the substrate;
- and
- a transistor provided over said front surface of the substrate, said transistor having at least a channel formation region comprising crystalline silicon, a gate insulating film adjacent to said channel formation region, and a gate electrode adjacent to said channel formation region with said gate insulating film interposed therebetween,
- wherein said insulating film comprising aluminum nitride has a thickness of 500 Å to 3 μm.
2 more elements
A semiconductor device comprising:
- a substrate having a front surface and a rear surface;
- an insulating film comprising aluminum nitride containing 0.001 to 10 atomic percent of oxygen provided on said front surface of the substrate;
- and
- a transistor provided over said front surface of the substrate, said transistor having at least a channel formation region comprising crystalline silicon, a gate insulating film adjacent to said channel formation region, and a gate electrode adjacent to said channel formation region with said gate insulating film interposed therebetween,
- wherein said insulating film comprising aluminum nitride has a thickness of 500 Å to 3μm, and
- wherein said insulating film comprising aluminum nitride has a thermal conductivity of 200 Wm−1K−1 or more.
3 more elements
Dependencies are inferred from the claim text.