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US 6,268,030 B1Granted
Silicon wafer carrier
AssigneeTeijin Limited
InventorsEn Lai Zhang, Satoshi Yamamoto, Takayoshi Numata, Kiyoshi Sugie
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AssigneeTeijin Limited
InventorsEn Lai Zhang, Satoshi Yamamoto, Takayoshi Numata, Kiyoshi Sugie
Estimating the term…
The present invention relates to a silicon wafer carrier consisting of a composition composed of (a) 100 parts by weight of a polyester, (b) 5 to 100 parts by weight of a polyether ester amide, (c) 10 to 2,500 ppm (based on the polyether ester amide) of an alkaline metal and (d) 0 to 40 parts by weight of a modified polyolefin, generating not more than 10 ppm of volatile gas by the heat-treatment at 150° C. for 60 minutes and eluting not more than 10 ppm of the alkaline metal by the immersion treatment in pure water at 80° C. for 120 minutes. The silicon wafer carrier has the generation of volatile gas and the elution of metal suppressed to an extent not to essentially cause the surface contamination of a silicon wafer and is provided with excellent permanent antistaticity and high mechanical properties and heat-resistance.
A silicon wafer carrier consisting essentially of a polytetramethylene terephthalate formed as said silicon wafer carrier, generating not more than 10 ppm of volatile gas when subjected to a heat-treatment at 150° C. for 60 minutes, and eluting not more than 50 ppb of alkaline metals when immersed in pure water at 80° C. for 120 minutes.
A process for preparing a silicon wafer carrier, which comprises:
Dependencies are inferred from the claim text.