Fixed abrasive finishing element having aids finishing method

A method of finishing of a heterogeneous semiconductor wafer surface being finished comprising the steps of:

• providing a finishing element having a fixed abrasive finishing surface and having a dispersed organic boundary lubricant, the organic boundary lubricant being free of encapsulating films;
• positioning the semiconductor wafer surface being finished proximate to the finishing surface;
• applying an operative finishing motion in an operative finishing interface comprising the interface between the fixed abrasive finishing surface and the semiconductor wafer surface being finished;
• and wherein
• applying the operative finishing motion transfers the organic boundary lubricant from the finishing surface to the operative finishing interface forming an organic lubricating boundary layer of from 1 to 6 molecules thick.

A method of finishing of a heterogeneous semiconductor wafer surface being finished comprising the steps of:

• providing a fixed abrasive finishing surface having a plurality of discrete, unconnected organic boundary lubricant regions free of encapsulating film;
• positioning the semiconductor wafer surface being finished proximate to the finishing surface;
• applying the operative finishing motion which transfers the organic boundary lubricant from the finishing surface to an operative finishing interface comprising the interface between the fixed abrasive finishing surface and the semiconductor wafer surface being finished forming a differential organic lubricating boundary layer in the operative finishing interface;
• and
• controlling the lubricating boundary layer film physical form by changing the lubrication control parameters in situ based on feed back information from a control subsystem having an operative sensor.

A method of finishing of a heterogeneous semiconductor wafer surface being finished comprising the steps of:

• providing a finishing element having an abrasive finishing surface and having an organic boundary lubricant therein;
• positioning the semiconductor wafer surface being finished proximate to the finishing surface;
• applying an operative finishing motion in an operative finishing interface comprising the interface between the fixed abrasive finishing surface and the semiconductor wafer surface being finished;
• and wherein
• applying the operative finishing motion transfers the organic boundary lubricant from the finishing surface to the operative finishing interface forming a heterogeneous organic lubricating boundary layer of from 1 to 6 molecules thick on the semiconductor wafer surface wherein:
• the operative finishing motion forms a friction in the interface between a uniform region on the semiconductor wafer surface and the finishing element finishing surface;
• the organic lubricating boundary layer physically or chemically interacts with and adheres to the semiconductor wafer surface;
• and
• the friction formed between the uniform region on the semiconductor wafer surface and the finishing element finishing surface is determined by lubricant properties other than viscosity.

A method of finishing of a semiconductor wafer surface having a conductive region being finished comprising the steps of:

• providing an abrasive finishing element finishing surface;
• providing an organic boundary lubricant between the finishing element finishing surface and the conductive region of the semiconductor wafer surface being finished;
• and
• applying an operative finishing motion between the semiconductor wafer surface being finished and the finishing element finishing surface forming a heterogeneous organic lubricating boundary layer of from 1 to 6 molecules thick on the conductive region of the semiconductor wafer surface wherein:
• the operative finishing motion forms a friction in the interface between the conductive region on the semiconductor wafer surface and the finishing element finishing surface;
• the organic lubricating boundary layer physically or chemically interacts with and adheres to the conductive region on the semiconductor wafer surface;
• and
• the friction formed between the conductive region on the semiconductor wafer surface and the finishing element finishing surface is determined by lubricant properties other than viscosity.

A method of finishing of a heterogeneous semiconductor wafer surface having uwanted raised regions being finished comprising the steps of:

• providing an abrasive finishing surface having a plurality of discrete, unconnected organic boundary lubricant regions free of encapsulating film;
• positioning the semiconductor wafer surface being finished proximate to the finishing surface;
• applying the operative finishing motion that transfers the organic boundary lubricant from the finishing surface to an operative finishing interface comprising the interface between the fixed abrasive finishing surface and the semiconductor wafer surface being finished forming a differential organic lubricating boundary layer in the operative finishing interface;
• and
• controlling the thickness of the organic lubricating boundary layer by changing at least one control parameter in a manner that changes the tangential force of friction in at least two different regions of the operative finishing interface in response to an in situ control signal.