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US 6,267,122 B1Granted
Semiconductor cleaning solution and method
AssigneeTexas Instruments Incorporated
InventorsRichard L. Guldi, Jeffrey W. Ritchison
Life of this patent
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Abstract
An ammonium or amide aqueous solution without oxidzers for cleaning semiconductor wafers with exposed TiN (103). Effective particulate (109) removal occurs without the standard use of hydrogen peroxide which would attack the TiN (103). Solution temperatures up to 90° C. plus applied ultrasonic energy enhance the cleaning efficiency. Surfactants may be included.
Claims5
A method of wafer cleaning, comprising the steps of:
- (a) providing a wafer to be cleaned, said wafer with exposed metal regions;
- and
- (b) applying a solution consisting essentially of water plus ammonium hydroxide to said wafer while simultaneously applying an ultrasonic energy to said solution.
Dependencies are inferred from the claim text.