Simple and inexpensive method and device for measuring concentration and rate of change of a crystal etchant gas, such as HF or DF gas
AssigneeTRW Inc.
InventorPeter M. Livingston
Life of this patent
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AssigneeTRW Inc.
InventorPeter M. Livingston
Estimating the term…
A method and device for determining concentration and rate of change of concentration of a gas having ability to act as crystal etchant, such as hydrofluoric acid (HF) or deuterium fluoric acid (DF) gas. A crystal 22 is placed in a chamber and subjected to erosion by the gas. The crystal resonant frequency, changeable during the crystal erosion, is determined and a crystal resonant frequency change is calculated to determine the concentration of the gas. The crystal 22 is preferably an AT-cut quartz crystal. The step of obtaining the crystal resonant frequency is preferably performed in a Colpitts oscillator. The step of calculating the gas concentration, proportional to the change in the crystal resonant frequency, may also encompass calculating a change and rate of change in the gas concentration, and averaging the calculated gas concentration. The crystal 22 is preferably inserted in a crystal holder 20, and mounted on an electronic box 34 which holds the oscillator board. The crystal 22 is partially protected with a cover 30 and is easily replaceable.
A device for determining concentration of a gas in a chamber, said gas having ability to act as a crystal etchant, said device comprising:
A method for determining concentration of a gas in a chamber, said gas having ability to act as a crystal etchant, said method comprising the steps of;
A device for determining concentration of a gas in a chamber, said gas having ability to act as crystal etchant, said device comprising:
A device for determining concentration of a gas in a chamber, said gas having ability to act as crystal etchant, said device comprising:
A method for determining concentration of a gas in a chamber, said gas having ability to act as crystal etchant, said method comprising the steps of:
Dependencies are inferred from the claim text.