US 6,263,566 B1 · Flexible semiconductor interconnect fabricated by backslide thinning

Abstract

An interconnect for testing semiconductor components includes a thinned substrate, and first contacts on the substrate for electrically engaging second contacts on the components. The interconnect can be configured for use with a testing apparatus for testing discrete components such as dice or chip scale packages, or alternately for use with a testing apparatus for testing wafer sized components, such as wafers, panels and boards. The thinned substrate has a thickness that is substantially less than a thickness of the components being tested. The thinned substrate can flex upon application of a biasing force by the testing apparatus, permitting the first contacts to move in the z-direction to accommodate variations in the planarity of the second contacts. For fabricating the interconnect, the first contacts are formed on the substrate, and then covered with a protective mask. With the mask in place, the substrate can be thinned by grinding, chemical mechanical planarization, or alternately by etching a backside of the substrate. Other process steps such as via formation and backside metallization can also be performed with the protective mask in place. The protective mask can then be removed, and the thinned substrate attached to a rigid substrate, or base, using a compliant polymer layer.

Claims17

Dependent claims

A method for fabricating an interconnect for a semiconductor component comprising;

providing a substrate comprising a first side and a second side;
forming a plurality of first contacts on the first side configured to electrically engage a plurality of second contacts on the component;
following forming of the first contacts, forming a protective mask on the first side of the substrate and on the first contacts, the protective mask substantially covering the first contacts and providing a planar surface for handling the substrate;
following the forming the protective mask step, thinning the second side of the substrate to a thickness of between about 0.002 inches to 0.014 inches by grinding, planarizing or etching the second side;
and
following the thinning step, removing selected portions of the protective mask to form a permanent structure on the substrate.

3 more elements

Dependencies are inferred from the claim text.

Flexible semiconductor interconnect fabricated by backslide thinning

Life of this patent

Flexible semiconductor interconnect fabricated by backslide thinning

Life of this patent

Abstract

Claims17