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AssigneeKabushiki Kaisha Tokai Rika Denki Seisakusho
InventorsToshio Fukuda, Fumihito Arai, Koichi Itoigawa, Hitoshi Iwata
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A parallel plate structure (1) is provided with a pair of bimorph piezoelectric elements (2) and prismatic insulation spacers (3) inserted between the piezoelectric elements (2) at the upper and lower ends thereof for cementing the piezoelectric elements (2) together via the spacers (3). Each piezoelectric element (2) comprises a planar base material (4) of titanium, PZT thin films (5) formed on both sides of the base material (4) by the hydrothermal method, and electrode films (6) formed on the PZT thin films (5). The base material (4) is 20 μm thick and the PZT thin films (5) are several pm thick, while the aluminum electrode films (6) are several um thick.
A parallel plate structure including a pair of parallel bimorphs (2), and a spacer (3) for connecting the bimorphs (2), wherein each bimorph (2) has a titanium substrate (4), the titanium substrate (4) having a first surface and a second surface, which is located on the opposite side of the first surface, and a PZT thin-film (5) formed on each of the first and second surfaces, wherein the parallel plate structure is characterized by:
A piezoelectric device, comprising:
Dependencies are inferred from the claim text.